T. Nishino

发表

Analysis of derivative spectrum of indirect exciton absorption in silicon

Y. Hamakawa, M. Takeda, T. Nishino, 1973 .

Characterization of interface stress at InGaPAs/GaAs by cr-related luminescence line in GaAs

Y. Hamakawa, M. Kondo, S. Shirakata, 1986 .

Influence of impurity doping on free-exciton absorption in silicon

Y. Hamakawa, T. Nishino, H. Nakayama, 1977 .

Temperature dependence of anomalous structure in the derivative absorption spectra of Si:P

Y. Hamakawa, H. Nakayama, T. Nishino, 1977 .

Fine structures of indirect exciton absorption in phosphorus-doped silicon

Y. Hamakawa, T. Nishino, 1975 .

Direct observation of split-off exciton and phonon structures in absorption spectrum of silicon

Y. Hamakawa, M. Takeda, T. Nishino, 1974 .

Wavelength modulation of the photoresponse near the indirect edges of Si, Ge, and GaP

Y. Hamakawa, T. Nishino, 1972 .

Observation of free-exciton two-electron transitions in wavelength-derivative absorption spectra of impurity-doped silicon

Y. Hamakawa, T. Nishino, 1975 .