Binghui Li

Evaluation of damage induced by inductively coupled plasma etching of 6H–SiC using Au Schottky barrier diodes

Jian H. Zhao, Binghui Li, L. Cao, 1998 .

Effects of strain on the electron mobility in SOI Si-MOSFET

R. Han, Yangyuan Wang, Binghui Li, 1995, Proceedings of 4th International Conference on Solid-State and IC Technology.

Etching of SiC Using Inductively Coupled Plasma

Jian H. Zhao, Binghui Li, L. Cao, 1998 .