R. M. Sieg

发表

Monolithic integration of III-V materials and devices on silicon

Steven A. Ringel, Mayank T. Bulsara, Eugene A. Fitzgerald, 1999, Photonics West.

Effective masses for small nitrogen concentrations in InGaAsN alloys on GaAs

Xing Wei, Eric Daniel Jones, Andrew A. Allerman, 2000, Photonics West - Optoelectronic Materials and Devices.

MOCVD-grown 1.3-μm InGaAsN multiple quantum well lasers incorporating GaAsP strain-compensation layers

Kent D. Choquette, Andrew A. Allerman, R. M. Sieg, 2001, SPIE OPTO.

Minority carrier diffusion, defects, and localization in InGaAsN with 2% nitrogen

Eric Daniel Jones, Andrew A. Allerman, R. M. Sieg, 2000 .

Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si1−xGex/Si substrates

Steven A. Ringel, S. M. Ting, Thomas A. Langdo, 1998 .

Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy

John F. Klem, Eric Daniel Jones, A. A. Allerman, 2002 .

High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates

Steven A. Ringel, S. M. Ting, Thomas A. Langdo, 1998 .

Investigation of the accuracy of pyrometric interferometry in determining AlxGa1−xAs growth rates and compositions

Steven A. Ringel, R. M. Sieg, R. N. Sacks, 1996 .

Room temperature continuous wave InGaAsN quantum well vertical cavity lasers emitting at 1.3 um

Kent D. Choquette, John F. Klem, A. A. Allerman, 2000 .

Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

Pallab Bhattacharya, John A. Woollam, R. M. Sieg, 1991 .

Deep levels and their impact on generation current in Sn-doped InGaAsN

Steven A. Ringel, Andrew A. Allerman, R. M. Sieg, 2001 .

Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion

Steven A. Ringel, S. M. Ting, R. M. Sieg, 1998 .