G. Christian

Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities

C. Humphreys, R. Oliver, M. Kappers, 2018, Physical Review B.

Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells

C. Humphreys, R. Oliver, M. Kappers, 2018, Materials.

Effect of Si-doped InGaN underlayers on photoluminescence efficiency and recombination dynamics in InGaN/GaN quantum wells

D. Binks, R. Oliver, Robert Barrett, 2021, Journal of Physics D: Applied Physics.

Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

C. Humphreys, S. Schulz, R. Oliver, 2019, Japanese Journal of Applied Physics.