D. Lee

Measurement of cosmogenic $^9$Li and $^8$He production rates at RENO

J. G. Kim, K. Joo, S. Kim, 2022, 2204.09215.

650 V Dispersion-free enhancement-mode GaN-on-Si HEMTs processed in a 200 mm CMOS Fab

S. Decoutere, W. Luo, D. Marcon, 2017, 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Measurement of cosmogenic $^9$Li and $^8$He production rates at RENO

J. G. Kim, K. Joo, S. Kim, 2022, 2204.09215.

Measurement of cosmogenic $^9$Li and $^8$He production rates at RENO

J. G. Kim, K. Joo, S. Kim, 2022, 2204.09215.

Fabrication of body-tied FinFETs (Omega MOSFETs) using bulk Si wafers

U. Chung, J. Moon, E. Yoon, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).