A. Ginoudi

Performance of GaxIn1−xP/GaAs heterojunctions grown by metal‐organic molecular‐beam epitaxy and metal‐organic vapor‐phase epitaxy

E. Paloura, N. Frangis, A. Ginoudi, 1994 .

“On the Growth - and Annealing - Temperature Dependence of the Electrical Properties of Ga 0.51 In 0.49 P/GaAs Heterostructures Grown by Mombe”

A. Christou, E. Paloura, N. Frangis, 1992 .

Deep level analysis of undoped Gax In1-x P/GaAs single heterojunctions grown by MOMBE and MOVPE

G. Kiriakidis, E. Paloura, A. Ginoudi, 1992 .

Electrical and structural properties of Ga0.51In0.49P/GaAs heterojunctions grown by metalorganic vapor‐phase epitaxy

G. Kiriakidis, A. Christou, E. Paloura, 1992 .

Evolution of Surface Textures on n-lnP Samples Etched Photoelectrochemically

G. Hollinger, E. Bergignat, W. Anderson, 2005 .

Surface modification of a-SiC thin films with ex-situ hydrogenation

A. Thanailakis, N. Georgoulas, E. Paloura, 1995 .

Optical properties of thin SiC films: Surface modification by ex-situ hydrogenation

Robert L. Johnson, E. Paloura, C. Janowitz, 1996 .

Structural study of InxGa1-xP/GaAs interfaces grown by MOMBE

J. C. Garcia, A. Dimoulas, G. Kiriakidis, 1992 .

Effect of doping on electron traps in metalorganic molecular‐beam epitaxial GaxIn1−xP/GaAs heterostructures

G. Kiriakidis, A. Christou, E. Paloura, 1991 .

Low‐temperature dc characteristics of S‐ and Si‐doped Ga0.51In0.49P/GaAs high electron mobility transistors grown by metalorganic molecular beam epitaxy

J. C. Garcia, G. Kiriakidis, A. Christou, 1992 .

Donor related deep traps in MOMBE Ga/sub 0.51/In/sub 0.49/P/GaAs heterostructures: influence on the low temperature performance of HEMTs

J. C. Garcia, Ph. Maurel, George Kiriakidis, 1992, LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels.

Schottky diode and field‐effect transistor on InP

S. Loualiche, A. Corre, M. Salvi, 1989 .