K. Iwamoto

Wide Time-Domain Calculation of Energizing Surges in Multi-Conductor Transmission Line by a Method of Logarithmic Fourier Transformation

K. Iwamoto, 1981, IEEE Transactions on Power Apparatus and Systems.

Influence of manufacturing error for characteristics of bearing

K. Iwamoto, S. Oishi, 2002 .

Fermi level pinning engineering by Al compositional modulation and doped partial silicide for HfAlO/sub x/(N) CMOSFETs

A. Toriumi, H. Ota, H. Satake, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

217. Studies on Fetal Movement Recorded on Chart with New Continuous Wave (CW) Doppler Method

K. Iwamoto, T. Ito, M. Ohta, 1984 .

Earth-return impedance for the multi-layer case

K. Iwamoto, M. Nakagawa, 1976, IEEE Transactions on Power Apparatus and Systems.

Carrier separation analysis for clarifying leakage mechanism in unstressed and stressed HfAlO/sub x//SiO/sub 2/ stack dielectric layers

A. Toriumi, K. Yamamoto, H. Ota, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

Design and proof of high quality HfAlO/sub x/ film formation for MOSCAPs and nMOSFETs through Layer-by-Layer Deposition and Annealing process

A. Toriumi, K. Yamamoto, H. Ota, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

Suppression of reverse-short-channel effect in sub-0.1 /spl mu/m n-MOSFETs with Sb S/D implantation

K. Iwamoto, Kentaro Shibahara, M. Tanaka, 1999 .

Comprehensive Study of VFB Shift in High-k CMOS - Dipole Formation, Fermi-level Pinning and Oxygen Vacancy Effect

A. Toriumi, H. Ota, S. Migita, 2007, 2007 IEEE International Electron Devices Meeting.

Threshold voltage fluctuation induced by direct tunnel leakage current through 1.2-2.8 nm thick gate oxides for scaled MOSFETs

T. Ono, K. Iwamoto, T. Mihara, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).