H. Ullrich

发表

Fe and Ti doping of InP grown by metalorganic chemical‐vapor deposition for the fabrication of thermally stable high‐resistivity layers

D. Bimberg, T. Zinke, A. Krost, 1994 .

Cap and capless annealing of Fe‐implanted InGaAs

D. Bimberg, K. Wandel, B. Gruska, 1993 .

Defect‐induced redistribution of Fe‐ or Ti‐implanted and annealed GaAs, InAs, GaP, and InP

W. Schlaak, A. Knecht, D. Bimberg, 1992 .

A simple technique for simultaneous fabrication of p+/n diodes and ohmic contacts on n‐type InP

D. Bimberg, T. Wolf, H. Scheffler, 1992 .

Redistribution of Fe and Ti implanted into InP

W. Schlaak, A. Knecht, D. Bimberg, 1991 .

Surface characterization of new and aged semiconducting glazes

S. Gubanski, H. Ullrich, 2003 .

Adsorption of germanium and of oxygen on cleaved InP(110) surfaces: Auger electron spectroscopy and measurements of work function and of surface photovoltage

W. Mönch, L. Koenders, F. Bartels, 1985 .