C. Sparks

发表

An absolute determination of the ohm

H. L. Curtis, C. Moon, C. Sparks, 1936 .

Automated nanoliter solution deposition for total reflection X-ray fluorescence analysis of semiconductor samples ☆

C. Gondran, G. Havrilla, C. Sparks, 2006 .

Semiconductor applications of nanoliter droplet methodology with total reflection x-ray fluorescence analysis ☆

T. C. Miller, G. Havrilla, C. Sparks, 2004 .

A determination of the absolute ohm, using an improved self inductor

H. L. Curtis, C. Moon, C. Sparks, 1938 .

Investigation of total reflection X-ray fluorescence calibration with picoliter deposition arrays

U. Fittschen, G. Havrilla, C. Sparks, 2013 .

Sputter rate variations in silicon under high-k dielectric films

W. Vandervorst, J. Bennett, C. Gondran, 2004 .

Sample Retention in the Transport Tubing between an Electrothermal Vaporizer and an Inductively Coupled Plasma Mass Spectrometer

J. Holcombe, C. Sparks, Thomas L. Pinkston, 1996 .

Effect of Oxygen Ashing on Analyte Transport Efficiency Using ETV-ICP-MS

N. J. Miller-Ihli, J. Holcombe, C. Sparks, 1997 .

SIMS depth profiling of advanced gate dielectric materials

P. Hung, J. Bennett, C. Gondran, 2003 .

Characterization of high-k gate dielectric and metal gate electrode semiconductor samples with a total reflection X-ray fluorescence spectrometer

J. Bennett, C. Gondran, B. Foran, 2004 .

Picoliter solution deposition for total reflection X-ray fluorescence analysis of semiconductor samples

U. Fittschen, G. Havrilla, C. Sparks, 2010 .

Particle size distribution of sample transported from an electrothermal vaporizer to an inductively coupled plasma mass spectrometer

J. Holcombe, C. Sparks, Thomas L. Pinkston, 1993 .

Photovoltaic substrates and hafnium based gate dielectrics characterized with total reflection X-ray fluorescence

M. Page, C. Sparks, M. Beebe, 2008 .

Growth mechanism of TiN film on dielectric films and the effects on the work function

Husam N. Alshareef, Hongfa Luan, Kisik Choi, 2005 .

Integration of high-k gate stack systems into planar CMOS process flows

R. Bergmann, G. Bersuker, P. Zeitzoff, 2001, Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537).

Challenges in Integrating the High-K Gate Dielectric Film to the Conventional Cmos Process Flow

G. Bersuker, R. Bergmann, P. Lysaght, 2001 .

Standards for low values of direct capacitance

C. M. Sparks, Charles Moon, C. Moon, 1948 .

Trace metal analysis on hafnium silicate deposited Si wafer by Total Reflection X-ray Fluorescence

H. Takahara, C. Sparks, T. Kinashi, 2008 .