B. Zhao

发表

Electroless copper deposition solution induced chemical changes in low-k fluorinated dielectrics

Y. Shacham-Diamand, P. Vasudev, F. Shi, 1999 .

Design and control of critical properties of low-k dielectrics for nanoscale interconnects

F. Shi, B. Zhao, H. Zhou, 2004, Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..

Interfacial microstructure and reaction at the spin-coated fluorinated polyimide/Al interface: surface-enhanced X-ray diffraction and TEM studies

P. Vasudev, F. Shi, H. Tong, 1997 .

Change in chemical state of fluorinated polyimides after the electroless Cu deposition solution treatment

Y. Shacham-Diamand, P. Vasudev, F. Shi, 1999 .

Electric writing and its retention behavior in ferroelectric 0.94(Bi0.5Na0.5)TiO3-0.06BaTiO3 thin films investigated by piezoelectric force microscopy

H. Han, X. Y. Wang, Q. Yuan, 2016 .

Effect of carbon nanotubes on the microstructure and properties of plasma electrolytic oxidized ceramic coatings on high silicon aluminum alloy

X. Fang, H. Cui, Xiaoli Cui, 2022, Journal of Materials Research and Technology.

Reaction between Low Dielectric Constant Fluorinated Polyimide and Aluminum

P. Vasudev, F. Shi, H. Tong, 1997 .

Electroless CoWP Barrier/Protection Layer Deposition for Cu Metallization

P. Vasudev, S. Lopatin, V. Dubin, 1996 .

Sub-Half Micron Electroless Cu Metallization

Y. Shacham-Diamand, C. Ting, P. Vasudev, 1996 .

Modeling of chemical-mechanical polishing with soft pads

Frank G. Shi, F. Shi, B. Zhao, 1998 .

Temperature accelerated dielectric breakdown of PECVD low-k carbon doped silicon dioxide dielectric thin films

F. Shi, Hong Zhou, B. Zhao, 2005 .

Effect of deposition methods on dielectric breakdown strength of PECVD low-k carbon doped silicon dioxide dielectric thin films

H. Zhou, F. G. Shi, B. Zhao, 2004, Microelectron. J..

Thickness dependence of elastic modulus and hardness of on-wafer low-k ultrathin polytetrafluoroethylene films

Frank G. Shi, T. G. Nieh, S. Qu, 2000 .

Thickness dependent dielectric breakdown of PECVD low-k carbon doped silicon dioxide dielectric thin films: modeling and experiments

H. Zhou, F. G. Shi, B. Zhao, 2003, Microelectron. J..

Optical properties of PECVD dielectric thin films: thickness and deposition method dependence

Frank G. Shi, H. K. Kim, H. K. Kim, 2002 .

Thickness dependent glass transition temperature of PECVD low-k dielectric thin films: effect of deposition methods

Frank G. Shi, H. K. Kim, J. Yota, 2002 .

Low-k dielectrics for ULSI multilevel interconnections: thickness-dependent electrical and dielectric properties

F. G. Shi, H. K. Kim, F. Shi, 2000, Conference Record of the 2000 IEEE International Symposium on Electrical Insulation (Cat. No.00CH37075).

A novel sub-half micron Al-Cu via plug interconnect using low dielectric constant material as inter-level dielectric

T. Seidel, P. Vasudev, B. Zhao, 1997, IEEE Electron Device Letters.

Single step PVD planarized aluminum interconnect with low-/spl epsiv/ organic ILD for high performance and low cost ULSI

T. Seidel, P. Vasudev, B. Zhao, 1996, 1996 Symposium on VLSI Technology. Digest of Technical Papers.

Reliability and electrical properties of new low dielectric constant interlevel dielectrics for high performance ULSI interconnect

P. K. Vasudev, Thomas E. Seidel, T. Seidel, 1996, Proceedings of International Reliability Physics Symposium.