T. Lee

Photocurable Organic Gate Insulator for the Fabrication of High‐Field Effect Mobility Organic Transistors by Low Temperature and Solution Processing

I. Kang, T. Lee, J. H. Shin, 2007 .

Electron mobility enhancement using ultrathin pure Ge on Si substrate

C.W. Liu, C.-Y. Yu, M. Lee, 2005, IEEE Electron Device Letters.

Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film

H. Sohn, B. Min, K. Chung, 2010 .

Generalized analytical transport modeling of the DC characteristics of heterojunction bipolar transistors

P. Houston, T. Lee, 1993 .

Formation of a Ge-rich layer during the oxidation of strained Si1−xGex

B. Min, M. Cho, D. Ko, 2006 .

Investigation of impact ionization in thin GaAs diodes

John P. R. David, P. N. Robson, G. J. Rees, 1996 .

Non-local effects on the multiplication characteristics of thin GaAs p-i-n and n-i-p diodes

J. David, D. Wight, P. Robson, 1995, Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95.