H. Iwata

发表

Development and Evaluation of a Surface Acoustic Intensity Probe

Gary H. Koopmann, G. Koopmann, J. Dosch, 1998, Noise Control and Acoustics.

Reduction in Al Acceptor Density by Electron Irradiation in Al-Doped 4H-SiC

H. Matsuura, K. Aso, H. Iwata, 2004 .

Stacking faults in silicon carbide

S. Öberg, U. Lindefelt, P. Briddon, 2003 .

Cubic polytype inclusions in 4H–SiC

S. Öberg, U. Lindefelt, P. Briddon, 2003 .

Stacking faults in 3C-, 4H-, and 6H-SiC polytypes investigated by an ab initio supercell method

S. Öberg, U. Lindefelt, P. Briddon, 2003 .

A new type of quantum wells: stacking faults in silicon carbide

Hisaomi Iwata, Ulf Lindefelt, Sven Öberg, 2003, Microelectron. J..

Localized electronic states around stacking faults in silicon carbide

S. Öberg, U. Lindefelt, P. Briddon, 2001 .

Effective masses of two-dimensional electron gases around cubic inclusions in hexagonal silicon carbide

S. Öberg, U. Lindefelt, H. Iwata, 2003 .

Determination of the in-plane anisotropy of the electron effective mass tensor in 6H-SiC

H. Iwata, 2003 .

Donor and acceptor concentration dependence of the electron Hall mobility and the Hall scattering factor in n-type 4H– and 6H–SiC

K. Itoh, H. Iwata, 2001 .

Electronic Properties of Stacking Faults and Thin Cubic Inclusions in SiC Polytypes

U. Lindefelt, H. Iwata, 2004 .

Ab initio study of 3C inclusions and stacking fault–stacking fault interactions in 6H-SiC

S. Öberg, U. Lindefelt, P. Briddon, 2003 .

Electronic Localization around Stacking Faults in Silicon Carbide

S. Öberg, U. Lindefelt, P. Briddon, 2002 .

Theoretical study of planar defects in silicon carbide

S. Öberg, U. Lindefelt, P. Briddon, 2002 .

Theory of the anisotropy of the electron Hall mobility in n-type 4H– and 6H–SiC

K. Itoh, G. Pensl, H. Iwata, 2000 .

Electronic Structure of Twin Boundaries in 3C-SiC, Si and Diamond

S. Öberg, U. Lindefelt, P. Briddon, 2003 .

Electronic Properties of Stacking Faults in 15R-SiC

S. Öberg, U. Lindefelt, P. Briddon, 2003 .

Stacking Fault – Stacking Fault Interactions and Cubic Inclusions in 6H-SiC: an Ab Initio Study

S. Öberg, U. Lindefelt, P. Briddon, 2003 .

Effective Mass of Electrons in Quantum-Well-Like Stacking-Fault Gap States in Silicon Carbide

S. Öberg, U. Lindefelt, P. Briddon, 2003 .

Theoretical Study of Cubic Polytype Inclusions in 4H-SiC

S. Öberg, U. Lindefelt, P. Briddon, 2002 .

Theoretical Calculation of Stacking Fault Energies in Silicon Carbide

S. Öberg, U. Lindefelt, P. Briddon, 2002 .

Energies and electronic properties of isolated and interacting twin boundaries in 3C-SiC, Si, and diamond

S. Öberg, U. Lindefelt, P. Briddon, 2003 .