Maurício Massazumi Oka

Analysis of n+p Silicon Junctions with Varying Substrate Doping Concentrations Made under Ultraclean Processing Technology

Tadahiro Ohmi, Akira Nakada, Herzl Aharoni, 1997 .

Temperature dependence of reverse breakdown voltages of n/sup +/p Si ultra shallow junctions

T. Ohmi, Y. Tamai, A. Nakada, 2002, The 22nd Convention on Electrical and Electronics Engineers in Israel, 2002..

INFLUENCE OF FLUORINE IN BF2+ IMPLANTATION ON THE FORMATION OF ULTRASHALLOW AND LOW-LEAKAGE SILICON P+N JUNCTIONS BY 450-500 C ANNEALING

T. Ohmi, Y. Tamai, A. Nakada, 1997 .