P. Martin

Comparison of high quality (111)B and (100) AlGaAs grown by molecular beam epitaxy

Albert Chin, J. M. Ballingall, John Mazurowski, 1991 .

High quality (111)B GaAs, AlGaAs, AlGaAs/GaAs modulation doped heterostructures and a GaAs/InGaAs/GaAs quantum well

P. Ho, J. Ballingall, A. Chin, 1991 .

Use of triethylindium and bisphosphinoethane for the growth on InP by chemical beam epitaxy

J. Ballingall, A. Chin, J. Mazurowski, 1992 .

CBE Growth of InP with Triethylindium and Metalorganic Phosphorous Precursors: Bisphosphinoethane and Tertiarybutyl-Phosphine

J. Ballingall, S. Hersee, A. Chin, 1992 .

Chemical beam epitaxial growth of InP, InGaP, and InAs heterojunctions using triethylindium and bisphosphinoethane

J. Ballingall, A. Chin, J. Mazurowski, 1993 .

High‐quality materials and heterostructures on (111)B GaAs

J. Ballingall, A. Chin, U. Das, 1992 .

Novel pseudomorphic high electron mobility transistor structures with GaAs-In0.3Ga0.7As thin strained superlattice active layers

P. Ho, J. Ballingall, N. Lewis, 1989 .

Proton and electron radiation analysis of GaInP/sub 2//GaAs solar cells

P. Sharps, H. Hou, P. Martin, 2000, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036).