T. Aggerstam

发表

AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas

M. Shur, A. Ougazzaden, S. Marcinkevičius, 2008, Journal of Crystal Growth.

Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy

X. Y. Liu, S. Lourdudoss, L. Thylén, 2007 .

Quest for very high speed VCSELs: pitfalls and clues

Richard Schatz, Sebastian Lourdudoss, Marco Ghisoni, 2001, SPIE OPTO.

Investigation of the interface properties of MOVPE grown AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire

D. Look, H. Radamson, S. Lourdudoss, 2006 .

Enhancement of both direct-current and microwave characteristics of AlGaN∕GaN high-electron-mobility transistors by furnace annealing

G. Ng, K. Radhakrishnan, S. Lourdudoss, 2006 .

Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates

A. Ougazzaden, O. Durand, J. Chapman, 2008 .

Electrical and structural characterization of ion implanted GaN

A. Hallén, M. Usman, M. Linnarsson, 2009 .

Cracks in GaN/AlN multiple quantum well structures grown by MBE

Sebastian Lourdudoss, Petter Holmström, Thomas Aggerstam, 2008 .

AlGaN/GaN high-electron-mobility transistors on sapphire with Fe-doped GaN buffer layer by MOVPE

S. Lourdudoss, T. Aggerstam, Mikael Sjödin, 2006 .

Electron and Hole Capture Cross-Sections of Fe Acceptors in GaN:Fe Epitaxially Grown on Sapphire

S. Lourdudoss, T. Aggerstam, S. Lourdudoss, 2007 .

Anomalous k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures

Y. L. Chen, I. Lo, J. Chiang, 2006, cond-mat/0609396.

GaN thin films on z‐ and x ‐cut LiNbO3 substrates by MOVPE

A. Ougazzaden, A. Sirenko, T. Moudakir, 2008 .

Growth of GaN and GaN/AlN multiple quantum wells on sapphire, Si and GaN template by molecular beam epitaxy

Sebastian Lourdudoss, Lars Thylén, Petter Holmström, 2007 .