A. L. Louarn

发表

Inhomogeneous broadening of AlxGa1-xN/GaN quantum wells

J. Massies, N. Grandjean, S. Vézian, 2005 .

Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE

J. Massies, S. Joblot, Y. Cordier, 2008 .

AlN buffer layer growth for GaN epitaxy on (1 1 1) Si: Al or N first?

J. Massies, S. Vézian, F. Semond, 2009 .

Generation of terahertz acoustic waves in semiconductor quantum dots using femtosecond laser pulses

P. Mante, A. Devos, A. L. Louarn, 2010 .

Selective epitaxial growth of AlN and GaN nanostructures on Si(1 1 1) by using NH3 as nitrogen source

J. Massies, S. Vézian, A. L. Louarn, 2007 .

Strong effect of interband transitions in the picosecond ultrasonics response of metallic thin films

A. Devos, A. L. Louarn, 2003 .

Intrinsic current gain cutoff frequency of 30GHz with carbon nanotube transistors

Henri Happy, Gilles Dambrine, Nicolas Izard, 2007 .

About some optical properties of AlxGa1−xN /GaN quantum wells grown by molecular beam epitaxy

Nicolas Grandjean, Fabrice Semond, Mathieu Leroux, 2004 .

Pushing the limits of acoustics at the nanoscale using femtosecond transient interferometry

P. Mante, A. Devos, P. Emery, 2014 .