Ji-Hyeon Park

发表

Highly Uniform Characteristics of GaN Nanorods Grown on Si(111) by Metalorganic Chemical Vapor Deposition

Cheul‐Ro Lee, R. Navamathavan, Dong-Wook Kim, 2010 .

Effect of H2 Carrier Gas on the Growth of GaN Nanowires on Si(111) Substrates by Metalorganic Chemical Vapor Deposition

Cheul‐Ro Lee, R. Navamathavan, Dong-Wook Kim, 2010 .

Strain-Induced Metastable Phase Stabilization in Ga2O3 Thin Films.

M. Razeghi, C. Wolverton, V. Dravid, 2019, ACS applied materials & interfaces.

A III-nitride nanowire solar cell fabricated using a hybrid coaxial and uniaxial InGaN/GaN multi quantum well nanostructure

Cheul‐Ro Lee, San Kang, Jae-Kwan Sim, 2018, RSC advances.

Synthesis of hybrid nanowires comprising uniaxial and coaxial InGaN/GaN MQWs with a nano-cap

Cheul‐Ro Lee, San Kang, J. S. Kim, 2016 .

Non-polar InGaN quantum dots grown on the m-plane of n-GaN nanowires by a self-catalyst method using metal organic chemical vapor deposition

Cheul‐Ro Lee, R. Navamathavan, Y. Ra, 2014 .

Reduction of dislocations in α-Ga2O3 epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate

Soon-Ku Hong, D. Jeon, Hoki Son, 2021, IUCrJ.

Selective area growth of GaN nanowires using metalorganic chemical vapor deposition on nano-patterned Si(111) formed by the etching of nano-sized Au droplets

Cheul‐Ro Lee, R. Navamathavan, J. S. Kim, 2011 .

H trapping at the metastable cation vacancy in α-Ga2O3 and α-Al2O3

W. Fowler, Jihyun Kim, M. Stavola, 2022, Applied Physics Letters.

Self-powered solar-blind α-Ga2O3 thin-film UV-C photodiode grown by halide vapor-phase epitaxy

Jihyun Kim, D. Jeon, Jinho Bae, 2021, APL Materials.

Ultrasensitive Uv-C Detection Based on Mocvd-Grown Highly Crystalline Ultrawide Bandgap Orthorhombic Κ-Ga2o3

Chun Hong Kang, Woochul Kim, T. Ng, 2022, SSRN Electronic Journal.

Single β-Ga2O3 nanowire based lateral FinFET on Si

Yeliang Wang, X. Yi, Jinmin Li, 2022, Applied Physics Letters.

Radial growth behavior and characteristics of m-plane In0.16Ga0.84N/GaN MQW nanowires by MOCVD

Cheul‐Ro Lee, R. Navamathavan, Y. Ra, 2013 .

III-nitride nanowires for solar light harvesting: A review

Cheul‐Ro Lee, Ji-Hyeon Park, U. Chatterjee, 2017 .

Size effects of nano-pattern in Si(1 1 1) substrate on the selective growth behavior of GaN nanowires by MOCVD

Cheul‐Ro Lee, R. Navamathavan, Ji-Hyeon Park, 2012 .

Ultraviolet photoconductive devices with an n-GaN nanorod-graphene hybrid structure synthesized by metal-organic chemical vapor deposition

Cheul‐Ro Lee, J. H. Chu, San Kang, 2015, Scientific Reports.

Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires

Cheul‐Ro Lee, K. Jeong, San Kang, 2016, Scientific Reports.

Correlation of Pulsed Gas Flow on Si-doped α-Ga2O3 Epilayer Grown by Halide Vapor Phase Epitaxy

B. Ryu, D. Jeon, Hoki Son, 2020, ECS Journal of Solid State Science and Technology.

Type II band alignment of NiO/α-Ga2O3 for annealing temperatures up to 600 °C

Jihyun Kim, Honggyun Kim, D. Jeon, 2022, Journal of Vacuum Science & Technology A.

A pre-reaction suppressing strategy for α-Ga2O3 halide vapor pressure epitaxy using asymmetric precursor gas flow

S. Cho, D. Jeon, Ji-Hyeon Park, 2022, CrystEngComm.

Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire substrate by MOCVD

M. Razeghi, R. Mcclintock, Ji-Hyeon Park, 2019, Semiconductor Science and Technology.

Coaxial In(x)Ga(1-x)N/GaN multiple quantum well nanowire arrays on Si(111) substrate for high-performance light-emitting diodes.

Ji-Hyeon Park, Yong-Ho Ra, Cheul-Ro Lee, 2013, Nano letters.

Three-dimensional layer-by-layer anode structure based on Co3O4 nanoplates strongly tied by capillary-like multiwall carbon nanotubes for use in high-performance lithium-ion batteries.

J. Myoung, Jeong-O Lee, Jong-Pil Jegal, 2015, ACS applied materials & interfaces.

The synthesis of hybrid nanostructure comprising star-shaped GaN nanowires and Si nanoworms

Cheul‐Ro Lee, San Kang, Ji-Hyeon Park, 2017 .

High mobility of intrinsic defects in α-Ga2O3

A. Azarov, D. Jeon, Ji-Hyeon Park, 2023, Applied Physics Letters.

Effects of growth temperatures on the characteristics of n-GaN nanorods–graphene hybrid structures

Cheul‐Ro Lee, J. H. Chu, San Kang, 2015 .

Horizontal assembly of single nanowire diode fabricated by p-n junction GaN NW grown by MOCVD

K. San, Cheul‐Ro Lee, Min Ji Park, 2014 .

Adopting Novel Strategies in Achieving High-Performance Single-Layer Network Structured ZnO Nanorods Thin Film Transistors.

J. Myoung, H. Baik, P. Biswas, 2016, ACS applied materials & interfaces.

Single β-Ga2O3 nanowire back-gate field-effect transistor

M. Tang, Yeliang Wang, Chunyang Jia, 2022, Semiconductor Science and Technology.

Catalyst-Assisted Large-Area Growth of Single-Crystal β-Ga2O3 Nanowires on Sapphire Substrates by Metal–Organic Chemical Vapor Deposition

Chunyang Jia, Yiyun Zhang, X. Yi, 2020, Nanomaterials.

A review of the growth, doping, and applications of β-Ga2O3 thin films

Manijeh Razeghi, Ryan P McClintock, David J. Rogers, 2018, OPTO.

Low frequency noise in β -Ga2O3 based nanoelectronic devices

Yeliang Wang, X. Yi, Jinmin Li, 2023, Applied Physics Letters.

MOCVD grown β-Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire

M. Razeghi, Alexandre Jaud, A. Dehzangi, 2019, Applied Physics Express.

Growth behavior of GaN epilayers on Si(111) grown by GaN nanowires assisted epitaxial lateral overgrowth

Cheul‐Ro Lee, R. Navamathavan, Y. Ra, 2012 .

Vertically p-n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD.

Cheul‐Ro Lee, S. Kissinger, Ji-Hyeon Park, 2013, Nanoscale.

External catalyst-free InGaN photoelectrode for highly efficient energy conversion and H2 generation

Cheul‐Ro Lee, Yeon-Tae Yu, Y. Ra, 2023, Chemical Engineering Journal.

Low temperature solution process-based defect-induced orange-red light emitting diode

J. Myoung, P. Biswas, Sungchul Baek, 2015, Scientific Reports.

Heteroepitaxial Growth of Single-Crystalline β-Ga2O3 on GaN/Al2O3 Using MOCVD

W. Hwang, D. Jeon, Ji-Hyeon Park, 2023, Crystal Growth & Design.

Fabrication of InxGa1−xN/GaN QDs with InAlGaN capping layer by coaxial growth on non-(semi-) polar n-GaN NWs using metal organic chemical vapor deposition for blue emission

Cheul‐Ro Lee, San Kang, Ji-Hyeon Park, 2015 .

Electrically conductive anti‐reflecting nanostructure for chalcogenide thin‐film solar cells

J. Myoung, T. Lee, S. Hwang, 2015 .

Simultaneous sensing of UV light and strain with a single-layer network structure of self-assembled ZnO nanorods.

J. Myoung, S. H. Lee, T. Lee, 2015, Chemical Communications.

Three-dimensional layer-by-layer anode structure based on Co3O4 nanoplates strongly tied by capillary-like multiwall carbon nanotubes for use in high-performance lithium-ion batteries.

J. Myoung, Jeong-O Lee, Jong-Pil Jegal, 2015, ACS applied materials & interfaces.

Alpha-phase gallium oxide-based UVC photodetector with high sensitivity and visible blindness

W. Hwang, M. Shin, D. Jeon, 2023, APL Materials.

Near-IR emission of InGaN quasi-quantum dots on non-polar GaN nanowire structures

Cheul‐Ro Lee, Y. Ra, Ji-Hyeon Park, 2021, Nanoscale advances.

Demonstration of n-GaN:Si NWs having ultrahigh density and aspect ratio via a 3-step growth method using MOCVD

Cheul‐Ro Lee, Ji-Hyeon Park, A. Mandal, 2016 .