I. Goepfert

发表

Demonstration of efficient p-type doping in Al/sub x/Ga/sub 1-x/N/GaN superlattice structures

A. Osinsky, E. Schubert, P. Norris, 1999 .

Experimental and theoretical study of acceptor activation and transport properties in p-type Al xGa 1 À xN Õ GaN superlattices

A. Osinsky, N. Faleev, E. Schubert, 2000 .

Evidence of compensating centers as origin of yellow luminescence in GaN

J. Redwing, E. Schubert, I. Goepfert, 1997 .

Crystallographic Wet Chemical Etching of p‐Type GaN

K. Boutros, J. Redwing, E. Schubert, 2000 .

Competition between band gap and yellow luminescence in GaN and its relevance for optoelectronic devices

Robert F. Karlicek, R. F. Karlicek, W. Grieshaber, 1996 .

Optical properties of Si-doped GaN

Joan M. Redwing, W. Grieshaber, E. F. Schubert, 1997 .

Characteristics of light-emitting diodes based on GaN p-n junctions grown by plasma-assisted molecular beam epitaxy

T. Moustakas, R. Vaudo, K. Meehan, 1996 .

Enhancement of deep acceptor activation in semiconductors by superlattice doping

W. Grieshaber, E. F. Schubert, E. Schubert, 1996 .

Experimental and theoretical study of acceptor activation and transport properties in p-type AlxGa1−xN/GaN superlattices

A. Osinsky, N. Faleev, E. Schubert, 2000 .

Growth and doping of GaN directly on 6H-SiC by MBE

T. Moustakas, A. Sampath, D. Korakakis, 1995 .

Luminescence Properties of Si-Doped GaN and Evidence of Compensating Defects As the Origin of the Yellow Luminescence

J. Redwing, E. Schubert, I. Goepfert, 1997 .