R. Klockenbrink

发表

Photoluminescence of Strain-Engineered MBE-Grown GaN and InGaN Quantum Well Structures

C. Kisielowski, E. Weber, M. Rubin, 1997 .

Dark-Current Analaysis of InGaAs-MSM-Photodetectors on Silicon Substrates

H. Wehmann, A. Schlachetzki, S. Mo, 1995, ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference.

Impact of growth temperature, pressure and strain on the morphology of GaN films

C. Kisielowski, E. Weber, M. Rubin, 1996 .

Dark-Current Analysis of

H. Wehmann, A. Schlachetzki, G.-P. Tang, 1996 .

Selected-area electron-channeling pattern as a characterization method for heteroepitaxial layers

E. Weber, A. Schlachetzki, E. Peiner, 1998 .

The distribution of charge concentration in InP/Si

A. Schlachetzki, E. Peiner, A. Bartels, 1995 .

Comparative Analysis of Strain and Stress in MBE and MOCVD grown GaN thin films on sapphire

C. Kisielowski, Z. Liliental-Weber, E. Weber, 1997 .

Photoluminescence Characterization of p-type GaN:Mg

C. Kisielowski, E. Weber, M. Rubin, 1997 .

Stress Controlled MBE-growth of GaN:Mg and GaN:Si

C. Kisielowski, E. Weber, M. Rubin, 1997 .

Pressure controlled GaN MBE growth using a hollow anode nitrogen ion source

C. Kisielowski, Z. Liliental-Weber, E. Weber, 1996 .

Performance of InGaAs metal-semiconductor-metal photodetectors on Si

H. Wehmann, A. Schlachetzki, E. Peiner, 1996, IEEE Photonics Technology Letters.

MBE-Growth of Strain Engineered GaN Thin Films Utilizing a Surfactant

C. Kisielowski, E. Weber, M. Rubin, 1997 .

Wet Chemical Etching of Alignment V‐Grooves in (100) InP through Titanium or In0.53Ga0.47As Masks

H. Wehmann, A. Schlachetzki, E. Peiner, 1994 .

InGaAs Schottky contacts with an iron-doped InP enhancement layer

H. Wehmann, A. Schlachetzki, J. Darmo, 1994 .

Simulation of the orientation‐dependent growth of InGaAs/InP by metalorganic vapor‐phase epitaxy

A. Bakin, H. Wehmann, A. Schlachetzki, 1994 .