V. Voronkovskii

Electronic structure and charge transport mechanism in a forming-free SiO x -based memristor

A. Chin, Y. Novikov, V. Gritsenko, 2020, Nanotechnology.

Phonon-assisted electron tunneling between traps in silicon oxide films treated in hydrogen plasma

V. Gritsenko, T. Perevalov, I. Prosvirin, 2020 .

Conduction mechanisms of TaN/HfOx/Ni memristors

V. Aliev, V. Voronkovskii, A. K. Gerasimova, 2019, Materials Research Express.

Influence of the active TaN/ZrO x /Ni memristor layer oxygen content on forming and resistive switching behavior

T. Perevalov, I. Prosvirin, V. Aliev, 2020, Nanotechnology.

Comparative study of electron-beam crystallization of amorphous hafnium oxides HfO2 and HfOx (x = 1.82)

V. Aliev, V. Voronkovskii, A. K. Gerasimova, 2020, SN Applied Sciences.

Influence of HfOx composition on hafnium oxide-based memristor electrical characteristics

Damir R. Islamov, V A Voronkovskii, Vladimir Sh. Aliev, 2018 .

Electronic structure and charge transport in nonstoichiometric tantalum oxide

V. Gritsenko, T. Perevalov, V. Aliev, 2018, Nanotechnology.

Charge Transport and the Nature of Traps in Oxygen Deficient Tantalum Oxide.

Y. Roizin, V. Gritsenko, V. Pustovarov, 2018, ACS applied materials & interfaces.