Shuang Liu

AlN/GaN Superlattice Channel HEMTs on Silicon Substrate

Y. Hao, Jincheng Zhang, Shenglei Zhao, 2021, IEEE Transactions on Electron Devices.

A novel normally-off GaN vertical Schottky source tunnel-junction field-effect transistor

Chunfu Zhang, Jincheng Zhang, Shenglei Zhao, 2022, Micro and Nanostructures.

A high-voltage GaN quasi-vertical metal–insulator–semiconductor Schottky barrier diode on Si with excellent temperature characteristics

Jincheng Zhang, Shenglei Zhao, Zhihong Liu, 2022, Journal of Physics D: Applied Physics.

Novel In-Situ AlN/p-GaN Gate HEMTs With Threshold Voltage of 3.9 V and Maximum Applicable Gate Voltage of 12.1 V

Tangsheng Chen, Jincheng Zhang, Shenglei Zhao, 2023, IEEE Transactions on Electron Devices.

Characterization of trap states in AlN/GaN superlattice channel high electron mobility transistors under total-ionizing-dose with 60Co γ-irradiation

Jincheng Zhang, Shenglei Zhao, Zhihong Liu, 2022, Applied Physics Letters.