Xiufeng Song

AlN/GaN Superlattice Channel HEMTs on Silicon Substrate

Y. Hao, Jincheng Zhang, Shenglei Zhao, 2021, IEEE Transactions on Electron Devices.

Wide-range-adjusted threshold voltages for E-mode AlGaN/GaN HEMT with a p-SnO cap gate

Chunfu Zhang, Jincheng Zhang, Shenglei Zhao, 2021, Science China Materials.

A novel normally-off GaN vertical Schottky source tunnel-junction field-effect transistor

Chunfu Zhang, Jincheng Zhang, Shenglei Zhao, 2022, Micro and Nanostructures.

Determination of the leakage current transport mechanisms in quasi-vertical GaN–on–Si Schottky barrier diodes (SBDs) at low and high reverse biases and varied temperatures

Y. Hao, Jincheng Zhang, Jing Ning, 2021 .

A high-voltage GaN quasi-vertical metal–insulator–semiconductor Schottky barrier diode on Si with excellent temperature characteristics

Jincheng Zhang, Shenglei Zhao, Zhihong Liu, 2022, Journal of Physics D: Applied Physics.

Parameter Shift of Quasi-Vertical GaN-on-Si Schottky Barrier Diodes Under On-State Forward-Current (2–4 kA/cm2) Stress

Q. Feng, Jincheng Zhang, Shenglei Zhao, 2023, IEEE Transactions on Electron Devices.

Characterization of trap states in AlN/GaN superlattice channel high electron mobility transistors under total-ionizing-dose with 60Co γ-irradiation

Jincheng Zhang, Shenglei Zhao, Zhihong Liu, 2022, Applied Physics Letters.

A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings

Y. Hao, Jincheng Zhang, Shenglei Zhao, 2021, Applied Physics Express.