Yinhe Wu

AlN/GaN Superlattice Channel HEMTs on Silicon Substrate

Y. Hao, Jincheng Zhang, Shenglei Zhao, 2021, IEEE Transactions on Electron Devices.

Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate

Y. Hao, Qing Yang, Jincheng Zhang, 2021, Science China Information Sciences.

High-performance quasi-vertical GaN Schottky barrier diode with anode selective fluorine treatment

Y. Hao, Jincheng Zhang, Jing Ning, 2019, Semiconductor Science and Technology.

Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs

Jincheng Zhang, Shenglei Zhao, Zhihong Liu, 2022, Science China Information Sciences.

Effects of thermal annealing on the electrical and structural properties of Mo/Au schottky contacts on n-GaN

Y. Hao, Jincheng Zhang, Jing Ning, 2021 .

Distribution of electron traps in SiO 2 /HfO 2 nMOSFET

Xuefeng Zheng, Wang Yingzhe, Liao Xiaowei, 2016 .

More Than 3000 V Reverse Blocking Schottky-Drain AlGaN-Channel HEMTs With >230 MW/cm2 Power Figure-of-Merit

Y. Hao, Jincheng Zhang, Shenglei Zhao, 2019, IEEE Electron Device Letters.

Novel In-Situ AlN/p-GaN Gate HEMTs With Threshold Voltage of 3.9 V and Maximum Applicable Gate Voltage of 12.1 V

Tangsheng Chen, Jincheng Zhang, Shenglei Zhao, 2023, IEEE Transactions on Electron Devices.