N. Yafune

High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate

S. Hashimoto, H. Tokuda, M. Kuzuhara, 2010 .

AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation

H. Tokuda, M. Kuzuhara, K. Akita, 2014 .

Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack

S. Hashimoto, M. Kuzuhara, K. Akita, 2011 .

Low-Resistivity V/Al/Mo/Au Ohmic Contacts on AlGaN/GaN Annealed at Low Temperatures

M. Kuzuhara, K. Sakuno, N. Yafune, 2009 .

High carrier concentration in high Al‐composition AlGaN‐channnel HEMTs

H. Amano, M. Ueno, Takao Nakamura, 2012 .