A. Escobosa-Echavarria

White luminescence emission from silicon implanted germanium

Y. Kudriavtsev, Angelica Hernandez, A. Escobosa-Echavarria, 2018 .

Emission and HR-XRD study of MBE structures with InAs quantum dots and AlGaInAs strain reducing layers

G. Polupan, R. Cisneros-Tamayo, T. Torchynska, 2018, Superlattices and Microstructures.

Self-assembly of compositionally modulated Ga1−xMnxAs multilayers during molecular beam epitaxy

M. López-López, I. Martínez-Velis, S. Morelhão, 2013 .

As4 overpressure effects on the phase purity of cubic GaN layers grown on GaAs substrates by RF-MBE

Y. L. Casallas-Moreno, F. Ruiz-Zepeda, M. López-López, 2015 .

A new method of making ohmic contacts to p-GaN

M. López-López, Y. Kudriavtsev, A. Hernández, 2016 .

On the delta-type doping of GaAs-based heterostructures with manganese compounds

M. López-López, K. Moiseev, Y. Kudriavtsev, 2017 .

Study of structural properties of cubic InN films on GaAs(001) substrates by molecular beam epitaxy and migration enhanced epitaxy

M. López-López, I. Martínez-Velis, S. Gallardo-Hernández, 2013 .

Growth mechanism and physical properties of the type-I In0.145Ga0.855As Sb1−y/GaSb alloys with low As content for near infrared applications

M. Pérez-González, J. Mendoza-Álvarez, J. Herrera-Pérez, 2019, Journal of Alloys and Compounds.