L. Fedina

发表

The Mechanism of {113} Defect Formation in Silicon: Clustering of Interstitial–Vacancy Pairs Studied by In Situ High-Resolution Electron Microscope Irradiation

A. Chuvilin, S. Song, A. Gutakovskii, 2013, Microscopy and Microanalysis.

Structural Transformations of the Dislocation Cores in Si and Their Relationship with Photoluminescence

V. Vdovin, A. Gutakovskii, T. Shamirzaev, 2021, Crystallography Reports.

Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films

A. Cherkov, V. Popov, L. Fedina, 2018, Semiconductors.

On the structure and photoluminescence of dislocations in silicon

A. Gutakovskii, T. Shamirzaev, L. Fedina, 2018, Journal of Applied Physics.

On the mechanism of {111}-defect formation in silicon studied by in situ electron irradiation in a high resolution electron microscope

J. Vanhellemont, J. Landuyt, A. Gutakovskii, 1998 .

Precipitation of boron in silicon on high-dose implantation

A. Cherkov, L. Fedina, K. Feklistov, 2010 .

ATOMIC STRUCTURE AND NONELECTRONIC PROPERTTIES OF SEMICONDUCTORS Precipitation of Boron in Silicon on HighDose Implantation

A. Cherkov, L. Fedina, K. Feklistov, 2010 .

High Temperature Implantation of Silicon by B+ and BF2+ Ions

C. Weise, E. Wieser, L. Fedina, 1987 .

FZ-Si crystal growth and HREM study of new types of extended defects during in situ electron irradiation

A. Gutakovskii, L. Fedina, A. Aseev, 2001 .

In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si 1-x Ge x /(001)Si structures

E. Parker, O. Lebedev, G. Tendeloo, 2000 .

Extended Defects Formation in Si Crystals by Clustering of Intrinsic Point Defects Studied by in-situ Electron Irradiation in an HREM

J. Vanhellemont, J. Landuyt, A. Gutakovskii, 1999 .

Intrinsic point defect clustering in Si: a study by HVEM and HREM in situ electron irradiation

J. Vanhellemont, J. Landuyt, A. Gutakovskii, 1997 .

Clusters of Interstitial Atoms in Silicon and Germanium

H. Bartsch, L. Fedina, A. L. Aseev, 1994 .

Study of interaction of point defects with dislocations in silicon by means of irradiation in an electron microscope

L. Fedina, A. Aseev, 1986 .

Boron non-uniform precipitation in Si at the Ostwald ripening stage

L. Fedina, K. Feklistov, 2009 .

Consecutive stages of redistribution of oxygen implanted in silicon heavily doped with boron

A. Cherkov, L. Fedina, V. Obodnikov, 2006 .

High-temperature ion implantation in silicon

I. Tyschenko, G. Kachurin, L. Fedina, 1992 .

Real-time observation of self-interstitial reactions on an atomically smooth silicon surface

Technology, Novosibirsk State Technical University, S. Kosolobov, 2019, Surface Science.

Universality of the {113} Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation

A. Gutakovskii, A. Latyshev, L. Fedina, 2017 .

Recombination of point defects and their interaction with the surface in the course of the clusterization of these defects in Si

L. Fedina, 2001 .

OBSERVATION OF VACANCY CLUSTERING IN FZ-SI CRYSTALS DURING IN SITU ELECTRON IRRADIATION IN A HIGH VOLTAGE ELECTRON MICROSCOPE

J. Vanhellemont, J. Landuyt, L. Fedina, 1996 .

Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope

A. Romano-Rodríguez, J. Vanhellemont, J. Landuyt, 1995 .

High resolution electron microscopy of semiconductor interfaces

A. Gutakovskii, L. Fedina, A. Aseev, 1995 .

Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope

J. Vanhellemont, J. Landuyt, L. Fedina, 1995 .

Photoluminescence associated with {113} defects in oxygen‐implanted silicon

N. Sobolev, V. Vdovin, A. Gutakovskii, 2017 .

Atomic structure of extended defects in boron-implanted silicon layers

A. Gutakovskii, A. Latyshev, L. Fedina, 2014 .

Precise measurements of nanostructure parameters

A. Gutakovskii, A. Latyshev, S. Kosolobov, 2010 .

On the mechanism of {113}-defect formation in Si

A. Chuvilin, S. Song, A. Gutakovskii, 2005 .

The Structure and Photoluminescence of Dislocations in Silicon 1

A. Chuvilin, A. Cherkov, K. Zhuravlev, 2006 .

Adatom concentration distribution on an extrawide Si(111) terrace during sublimation

A. Latyshev, L. Fedina, D. Rogilo, 2016 .

Instability of the distribution of atomic steps on Si(111) upon submonolayer gold adsorption at high temperatures

A. Gutakovskii, A. Latyshev, S. Kosolobov, 2005 .

The structure and morphology of Si (111) surface at the initial stages of high temperature copper deposition

A. Latyshev, S. Kosolobov, L. Fedina, 2009, 2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices.

DLTS study of oxygen precipitates in silicon annealed at high pressure

V. Popov, I. Antonova, A. Misiuk, 1996 .

Si-based light emitters synthesized with Ge+ ion bombardment

Zh. V. Smagina, A. Dvurechenskii, A. Zinovieva, 2021, Journal of Applied Physics.

A DLTS study of the evolution of oxygen precipitates in Si at high temperature and high pressure

V. Popov, I. Antonova, A. Misiuk, 1996 .

A new model for the (2x1) reconstructed CoSi2-Si(100) interface

G. V. Tendeloo, M. Rodewald, V. Buschmann, 1998 .

Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence

Deren Yang, N. Sobolev, V. Vdovin, 2018 .

Extended Defects in O+-Implanted Si Layers and Their Luminescence

N. Sobolev, V. Vdovin, A. Gutakovskii, 2021, Crystallography Reports.