Steven J. Holmes

发表

Edge lithography as a means of extending the limits of optical and nonoptical lithographic resolution

Wu-Song Huang, Steven J. Holmes, Toshiharu Furukawa, 1999, Advanced Lithography.

Linewidth control effects on MOSFET ESD robustness

Steven H. Voldman, Steven J. Holmes, James W. Adkisson, 1998 .

Further improvements in CGR formulation and process

Will Conley, William R. Brunsvold, John L. Sturtevant, 1994, Advanced Lithography.

Optimization of pitch-split double patterning phoresist for applications at the 16nm node

Scott Halle, Sen Liu, Shinichiro Kawakami, 2011, 2011 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.

Design, synthesis, and characterization of KrF negative developable bottom anti-reflective coating materials

Sen Liu, Brian Osborn, Brian P. Osborn, 2012, Other Conferences.

Progress toward developing high performance immersion compatible materials and processes

Kurt R. Kimmel, Karen Petrillo, Takashi Chiba, 2005, SPIE Advanced Lithography.

Characterization of linewidth variation on 248- and 193-nm exposure tools

Lars W. Liebmann, Peter Talvi, Richard A. Ferguson, 2001, SPIE Advanced Lithography.

Silicon containing polymer in applications for 193 nm high NA lithography processes

Karen Petrillo, Allen H. Gabor, Naftali E. Lustig, 2006, SPIE Advanced Lithography.

The evolution of IBM CMOS DRAM technology

John K. DeBrosse, Steven H. Voldman, James S. Nakos, 1995, IBM J. Res. Dev..

193 lithography and RELACS processing for BEOL lithography

Linda M. Hadel, Richard A. Ferguson, Karen Petrillo, 2001, SPIE Advanced Lithography.

A half-micron CMOS logic generation

Yuan Taur, Edward J. Nowak, Randy W. Mann, 1995, IBM J. Res. Dev..

Postexposure bake characteristics of a chemically amplified deep-ultraviolet resist

John L. Sturtevant, Steven J. Holmes, Paul A. Rabidoux, 1992, Advanced Lithography.

Deep-ultraviolet lithography for 500-nm devices

Karey L. Holland, Steven J. Holmes, Ruth Levy, 1990, Advanced Lithography.

Directed self-assembly defectivity assessment. Part II

Ofir Montal, Kfir Dotan, Joy Cheng, 2012, Advanced Lithography.

Manufacturing implementation of deep-UV lithography for 500-nm devices

John L. Sturtevant, Karey L. Holland, Steven J. Holmes, 1992, Advanced Lithography.

Manufacturing with DUV lithography

Steven J. Holmes, Mark C. Hakey, Peter H. Mitchell, 1997, IBM J. Res. Dev..

22 nm technology node active layer patterning for planar transistor devices

Scott Halle, Aasutosh Dave, Harry J. Levinson, 2009, Advanced Lithography.

Negative photoresists for optical lithography

Steven J. Holmes, Jeffrey D. Gelorme, Nancy C. LaBianca, 1997, IBM J. Res. Dev..

Development of KrF hybrid resist for a dual-isolation application

Laurent Grenouillet, Maud Vinet, Bruce B. Doris, 2013, Advanced Lithography.

Reducing Line Edge Roughness in Si and SiN through plasma etch chemistry optimization for photonic waveguide applications

Tymon Barwicz, Swetha Kamlapurkar, Sebastian Engelmann, 2017, Advanced Lithography.

Process characterization of pitch-split resist materials for application at 16nm node

Sen Liu, Nicolette Fender, Rao Varanasi, 2010, Advanced Lithography.

Highly etch-selective spin-on bottom antireflective coating for use in 193-nm lithography and beyond

Scott Halle, Marie Angelopoulos, Karen Petrillo, 2003, SPIE Advanced Lithography.

Simple, fast, 2.5-V CMOS logic with 0.25-/spl mu/m channel lengths and damascene interconnect

James S. Nakos, Steven J. Holmes, Steven W. Mittl, 1994, Proceedings of 1994 VLSI Technology Symposium.

Chemistry of Ketal Resist System and Its Lithographic Performance

William R. Brunsvold, Roger F. Sinta, Ronald W. Nunes, 1998 .

Integration of Directed Self-Assembly with 193 nm Lithography

William D. Hinsberg, Joy Cheng, Matthew E. Colburn, 2010 .

22-nm-node technology active-layer patterning for planar transistor devices

Scott Halle, Aasutosh Dave, Harry J. Levinson, 2010 .