J. Schäfer

发表

Electronic density of states and deep defects of hydrogenated amorphous carbon (a-C:H)

L. Ley, J. Ristein, J. Schäfer, 1994 .

Deposition and characterization of organic polymer thin films using a dielectric barrier discharge with different C2Hm/N2 (m = 2, 4, 6) gas mixtures

R. Hippler, R. Bogdanowicz, J. Meichsner, 2015 .

Macro- and microstress analysis in sol-gel derived Pb(ZrxTi1−x)O3 thin films

F. Aldinger, H. Näfe, J. Schäfer, 1999 .

Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces

C. Tu, C. Abernathy, G. Jessen, 2000 .

Depth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO2 and silicon

G. Lucovsky, L. Brillson, Hiroake Niimi, 1998 .

Interface formation between hydrogen terminated Si(111) and amorphous hydrogenated carbon (a-C:H)

L. Ley, J. Ristein, S. Miyazaki, 1997 .

Ultrathin Silicon Oxide and Nitride – Silicon Interface States

G. Lucovsky, L. Brillson, Hiroake Niimi, 1999 .

Effective correlation energies for defects in a-C:H from a comparison of photelectron yield and electron spin resonance experiments

L. Ley, J. Ristein, J. Schäfer, 1995 .

Formation of the interface between c-Si(111) and diamond-like carbon studied with photoelectron spectroscopy

L. Ley, J. Ristein, S. Miyazaki, 1998 .

Electronic and structural properties of the interface between c-Si(111) and diamond-like carbon

L. Ley, J. Ristein, J. Schäfer, 1997 .

Angular-resolved valence-band spectroscopy of different reconstructed 3C–SiC (001) surfaces

D. Zahn, S. Tautz, K. Lindner, 1998 .

Electronic structure and defect density of states of hydrogenated amorphous carbon (a-C:H) as determined by photoelectron and photoelectron yield spectroscopy

L. Ley, J. Ristein, J. Schäfer, 1993 .

Cathodoluminescence spectroscopy of deep defect levels at the ZnSe/GaAs interface with a composition-control interface layer

L. Vanzetti, L. Brillson, J. Paggel, 1999 .

Low temperature synthesis of ultrafine Pb(Zr, Ti)O_3 powder by sol-gel combustion

W. Sigmund, F. Aldinger, F. Aldinger, 1997 .

Chemical composition and bond structure of carbon-nitride films deposited by CH4/N2 dielectric barrier discharge

P. Mishra, A. Majumdar, R. Hippler, 2007 .

Indirect determination of miscibility properties of monolayer alloy films by simulation of thermal desorption spectra: Ag-Cu/Ru(0001)

P. Reinhardt, K. Wandelt, J. Schäfer, 1994 .

Understanding the microsolvation of radicals: Infrared spectroscopy of benzyl radical water clusters.

G. Schwaab, M. Havenith, D. Leicht, 2016, The Journal of chemical physics.

Experimental and theoretical study of the angular resolved secondary electron spectroscopy (ARSES) for W(100) in the energy range 0 ⩽ E ⩽ 20 eV

R. Feder, J. Hölzl, J. Schäfer, 1981 .

Angular resolved secondary electron spectroscopy (ARSES) on O/W(100) at various annealing temperatures

J. Hölzl, J. Schäfer, 1981 .

Near‐surface dopant passivation after wet‐chemical preparation

L. Ley, J. Ristein, S. Miyazaki, 1996 .

High sensitivity photoelectron yield spectroscopy with computer‐calculated electron optics

L. Ley, J. Ristein, H. Ibach, 1993 .

The density of states of ta-C, ta-C:H and a-C:H as determined by X-ray excited photoelectron spectroscopy and molecular dynamics calculation

L. Ley, J. Ristein, T. Frauenheim, 1996 .

Surface Fermi level position of hydrogen passivated Si(111) surfaces

L. Ley, J. Ristein, S. Miyazaki, 1996 .

Cathodoluminescence spectroscopy of nitrided SiO2–Si interfaces

G. Lucovsky, Hiroake Niimi, A. Young, 1999 .

Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces

G. Lucovsky, B. D. White, L. Brillson, 2000 .

Cathodoluminescence measurements of suboxide band-tail and Si dangling bond states at ultrathin Si–SiO2 interfaces

G. Lucovsky, G. Jessen, L. Brillson, 1998 .

Implication of hydrogen-induced boron passivation in wet-chemically cleaned Si(111):H

L. Ley, J. Ristein, S. Miyazaki, 1997 .

Low-energy cathodoluminescence spectroscopy of erbium-doped gallium nitride surfaces

Leonard J. Brillson, C. R. Abernathy, J. Schäfer, 1999 .