Hoechst

发表

Band offsets and interfacial properties of cubic CdS grown by molecular-beam epitaxy on CdTe(110).

Niles, Höchst, Hoechst, 1990, Physical review. B, Condensed matter.

Angle-resolved photoemission study of thin molecular-beam-epitaxy-grown alpha -Sn1-xGex films with x~0.5.

Engelhardt, Hoechst, Hernández-Calderón, 1989, Physical review. B, Condensed matter.

Observation of strain-induced splitting of degenerate valence bands using angle-resolved photoemission spectroscopy.

Hoechst, Rioux, 1993, Physical review. B, Condensed matter.

Strain-induced changes in the electronic valence-band structure of a cubic CdS(100) film.

Niles, Hoechst, 1991, Physical review. B, Condensed matter.

Angle-resolved photoemission study of the alpha -Sn/CdTe(100) interface.

Tang, Niles, Hoechst, 1987, Physical Review B (Condensed Matter).

Synchrotron-radiation photoemission study of CdS/CuInSe2 heterojunction formation.

Nelson, Engelhardt, Colavita, 1990, Physical review. B, Condensed matter.

Critical test of CdTe(100) angle-resolved photoemission spectra with band-structure calculations.

Niles, Höchst, Hoechst, 1991, Physical review. B, Condensed matter.

Experimental determination of the valence-band structure of molecular-beam-epitaxy-grown CdTe(110).

Niles, Hoechst, Hernández-Calderón, 1989, Physical review. B, Condensed matter.

Three-band transport and cyclotron resonance in alpha -Sn and alpha -Sn1-xGex grown by molecular-beam epitaxy.

Hoffman, Wagner, Engelhardt, 1989, Physical review. B, Condensed matter.

Electronic structure of the Si/GaP(110) interface.

Niles, Hoechst, 1989, Physical Review B (Condensed Matter).

Determination of the bowing parameter of the split-off band in Cd0.8Zn0.2Te(100) by angle-resolved photoemission spectroscopy.

Niles, Hoechst, 1992, Physical review. B, Condensed matter.