D. Abe

发表

High performance single grain si tfts inside a location-controlled grain by /spl mu/-czochralski process with capping layer

R. Ishihara, J. Metselaar, T. Shimoda, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Extraction Technique of Trap Density at Grain Boundaries in Polycrystalline-Silicon Thin-Film Transistors with Device Simulation

T. Shimoda, M. Kimura, S. Inoue, 2007 .

The study of oxide‐interface and grain‐boundary traps in poly‐Si TFT characteristics and its application to fabrication process diagnosis

M. Kimura, T. Shimoda, S. Inoue, 2005 .

P‐1: Dependence of Poly‐Si TFT Characteristics on Oxide Interface Traps and Grain Boundary Traps and its Application to Diagnosis of Fabrication Processes

T. Shimoda, M. Kimura, S. Inoue, 2004 .

P‐22: Single‐Grain Si TFTs and Circuits for Flexible Electronics and 3D‐ICs

R. Ishihara, W. Metselaar, K. Beenakker, 2007 .

46.1: Invited Paper: Interface — The Key to High‐Performance Poly‐Si TFT Fabrication

T. Shimoda, S. Higashi, T. Kawamura, 2003 .

Development of high-performance polycrystalline silicon thin-film transistors (TFTs) using defect control process technologies

T. Shimoda, S. Higashi, T. Kawamura, 2002, IEEE Electron Device Letters.

Low Temperature Process Technologies for the Next Generation High Performance Polycrystalline Silicon Thin-Film Transistors

T. Shimoda, S. Higashi, S. Inoue, 2001 .

Gate oxide induced switch-on undershoot current observed in thin-film transistors

R. Ishihara, P. Migliorato, V. Rana, 2005 .

Low-Temperature Formation of Device-Quality SiO2/Si Interfaces Using Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition

T. Shimoda, S. Higashi, S. Inoue, 2001 .

Plannar light source using a phosphor screen with single-walled carbon nanotubes as field emitters.

Toshimasa Hojo, Kazuyuki Tohji, Daisuke Abe, 2014, The Review of scientific instruments.

Method for Measuring the Distribution of Adhesion Forces on Continuous Nanoscale Protrusions Using Carbon Nanofiber Tip on a Scanning Probe Microscope Cantilever.

N. Shimoi, D. Abe, 2015, ACS applied materials & interfaces.

Low-energy-electron-diffraction study of the As-stabilized Si(111) “ 1 × 1 ” surface

S. Hasegawa, H. Nakashima, D. Abe, 1998 .

High-Quality SiO2/Si Interface Formation and Its Application to Fabrication of Low-Temperature-Processed Polycrystalline Si Thin-Film Transistor

T. Shimoda, S. Higashi, T. Kawamura, 2002 .

Low-power-consumption flat-panel light-emitting device driven by field-emission electron source using high-crystallinity single-walled carbon nanotubes

N. Shimoi, Kazuyuki Matsumoto, K. Tohji, 2017 .

Dependence of single-crystalline Si TFT characteristics on the channel position inside a location-controlled grain

S. Inoue, R. Ishihara, V. Rana, 2005, IEEE Transactions on Electron Devices.

Plannar light source using a phosphor screen with single-walled carbon nanotubes as field emitters.

Toshimasa Hojo, N. Shimoi, Sharon Bahena-Garrido, 2014, The Review of scientific instruments.

Method for Measuring the Distribution of Adhesion Forces on Continuous Nanoscale Protrusions Using Carbon Nanofiber Tip on a Scanning Probe Microscope Cantilever.

N. Shimoi, D. Abe, 2015, ACS applied materials & interfaces.