K. Kostecki

发表

Surface analysis of epitaxially grown GeSn alloys with Sn contents between 15% and 18%

C. Teichert, M. Oehme, J. Schulze, 2017 .

GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz.

Jörg Schulze, Erich Kasper, Marc Schmid, 2014, Optics express.

Absorption coefficients of GeSn extracted from PIN photodetector response

M. Oehme, J. Schulze, E. Kasper, 2015 .

High speed vertical GeSn photodiodes on Si

M. Oehme, J. Schulze, E. Kasper, 2014, 11th International Conference on Group IV Photonics (GFP).

Ge-on-Si photodiode with black silicon boosted responsivity

Thomas Käsebier, Andreas Tünnermann, Jörg Schulze, 2015 .

Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers

J. Schulze, M. Oehme, E. Kasper, 2015 .

Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers

Jörg Schulze, Erich Kasper, Martin Kittler, 2015, Photonics West - Optoelectronic Materials and Devices.

Electroluminescence of GeSn/Ge MQW LEDs on Si substrate.

Jörg Schulze, Martin Kittler, Bernhard Schwartz, 2015, Optics letters.

Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn

Jörg Schulze, Erich Kasper, Michael Oehme, 2014 .

GeSn Heterojunction LEDs on Si Substrates

Gregor Mussler, Dan Buca, Martin Kittler, 2014, IEEE Photonics Technology Letters.

Electrically pumped lasing from Ge Fabry-Perot resonators on Si.

Erich Kasper, Marc Schmid, Michael Oehme, 2015, Optics express.

GeSn/Ge multiquantum well photodetectors on Si substrates.

M. Oehme, J. Schulze, P. Zaumseil, 2014, Optics letters.

Ge and GeSn Light Emitters on Si

M. Oehme, J. Schulze, M. Kittler, 2015 .

Franz-Keldysh effect in GeSn pin photodetectors

Jörg Schulze, Michael Oehme, Martin Gollhofer, 2014 .

Contact resistivities of antimony-doped n-type Ge1−xSnx

J. Schulze, M. Oehme, V. Srinivasan, 2016 .

Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn

Jörg Schulze, Stephan Wirths, Dan Buca, 2013 .

Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges

Kurt Busch, Jörg Schulze, Inga A. Fischer, 2017, 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO).