A. N. Razzhuvalov

Analysis of boundary conditions for the envelope functions of GaN/InGaN(0001) heterostructures

G. F. Karavaev, V. Chernyshov, A. N. Razzhuvalov, 2012 .

A “capacitor” model of the hysteresis of tunneling current in w-GaN/AlGaN(0001) structures

S. Grinyaev, A. N. Razzhuvalov, 2009 .

Peculiarities of tunneling current in w-AlN/GaN(0001) two-barrier structures induced by deep-level defects

S. Grinyaev, A. N. Razzhuvalov, 2016 .

Resonant electron tunneling in GaN/Ga1−xAlxN(0001) strained structures with spontaneous polarization and piezoeffect

S. Grinyaev, A. N. Razzhuvalov, 2001 .