D. Schulze

发表

Basal twinning as a room temperature plastic deformation mode of chromium- and titanium-doped sapphire crystals†

B. Müller, D. Schulze, 1984 .

〈1210〉‐zone fracture anisotropy of sapphire

A. Krell, D. Schulze, 1979 .

Interpretation of XPS core level shifts and structure of thin silicon oxide layers

F. Bechstedt, J. Finster, A. Meisel, 1985 .

Characterization of amorphous SiOx layers with ESCA

J. Finster, A. Meisel, D. Schulze, 1985 .

Studies of the Si/SiO2 interface by angular dependent X‐ray photoelectron spectroscopy

J. Finster, D. Schulze, 1981 .

SiO compound formation by oxygen ion implantation into silicon

W. Skorupa, U. Kreissig, J. Finster, 1985 .

Chemical reactions at Cu∕ZnS(001) and In∕ZnS(001) heterojunctions: A comparison of photoelectron and SL2,3 x-ray emission spectroscopy

H. Peisert, T. Chassé, R. Szargan, 2005 .

Calculations of Magnetotransport Properties of InSb Bicrystals with Several Populated Q2D Subbands

G. Gobsch, G. Paasch, G. Nachtwei, 1988 .

Oxidation of etched silicon in air at room temperature; Measurements with ultrasoft X-ray photoelectron spectroscopy (ESCA) and neutron activation analysis

D. Flamm, G. Mende, J. Finster, 1983 .

Deformation mechanism and dislocation structure of high-purity molybdenum single crystals at low temperatures†

H. Kaufmann, D. Schulze, A. Luft, 1984 .

Slip Line Pattern and Active Slip Systems of Tungsten and Molybdenum Single Crystals Weakly Deformed in Tension at Room Temperature

J. Richter, D. Schulze, A. Luft, 1968 .

Dislocation internal friction and temperature dependence of yield stress in high-purity molybdenum single crystals

B. K. Kardashev, A. B. Lebedev, H. Kaufmann, 1989 .

On the change of dislocation structure during the postdeformation of cold worked molybdenum single crystals at elevated temperature

D. Schulze, A. Luft, C. Ritschel, 1978 .

High purity and chrome-doped GaAs buffer layers grown by liquid phase epitaxy for mesfet application

J. Abrokwah, D. Schulze, J. Borell, 1981 .

Landau levels and SdH-oscillations of the quasi two-dimensional electron gas at grain boundaries and near heterojunctions

G. Gobsch, G. Paasch, D. Schulze, 1989 .

The influence of inter-subband interactions and self-consistent effects on the magnetotransport in GaAs-(Ga,Al) as heterojunctions with two populated subbands

D. Ritchie, G. Gobsch, G. Paasch, 1991 .

Theoretical analyses of the Shubnikov-de Haas oscillation in InSb inversion layers

G. Gobsch, G. Paasch, D. Schulze, 1988 .

Interband spectroscopy of p-type GaAs/(Al,Ga)As quantum wells at low hole densities

J. M. Chamberlain, G. Kido, M. Henini, 1998 .

Electrical transport between delta layers in silicon

E. Hammerl, I. Eisele, G. Gobsch, 1992 .

Local partial densities of states in CuInS2 upper valence band determined by soft-x-ray emission spectroscopy: Evidence for In 5p contribution

T. Chassé, I. Konovalov, R. Szargan, 2005 .

Microstructure Dependence of the Brittle Fracture of Alumina

A. Krell, D. Schulze, 1979, October 16.

On grain boundary strength in sintered A12O3

E. Pippel, J. Woltersdorf, A. Krell, 1985 .

XPS Studies of SiO2 Surface Layers Formed by Oxygen Ion Implantation into Silicon

W. Skorupa, U. Kreissig, J. Finster, 1963, March 16.