Dongxue Liang

Low-Temperature Fabrication of Wafer-Bonded Ge/Si p-i-n Photodiodes by Layer Exfoliation and Nanosecond-Pulse Laser Annealing

Zhiyong Li, B. Cheng, Cheng Li, 2019, IEEE Transactions on Electron Devices.

Broadband 400-2400 nm Ge heterostructure nanowire photodetector fabricated by three-dimensional Ge condensation technique.

Cheng Li, Songyan Chen, Guangyang Lin, 2019, Optics express.

Fabrication of a polycrystalline SiGe- and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO2/Si substrate

Cheng Li, Songyan Chen, Yuping Zeng, 2020, Semiconductor Science and Technology.

Fabrication and modeling of SiGe and Ge nanowires on insulator by three-dimensional Ge condensation method

Cheng Li, Songyan Chen, Yuping Zeng, 2019, Semiconductor Science and Technology.

Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature

Cheng Li, Songyan Chen, Wei Huang, 2019, Materials Science in Semiconductor Processing.

Spin-on doping of phosphorus on Ge with a 9 nm amorphous Si capping layer to achieve n+/p  shallow junctions through rapid thermal annealing

Cheng Li, Songyan Chen, Wei Huang, 2019, Journal of Physics D: Applied Physics.