Longda Zhou

Alleviation of Negative-Bias Temperature Instability in Si p-FinFETs With ALD W Gate-Filling Metal by Annealing Process Optimization

E. Simoen, Z. Ji, Guilei Wang, 2021, IEEE Journal of the Electron Devices Society.

An Investigation of Field Reduction Effect on NBTI Parameter Characterization and Lifetime Prediction Using a Constant Field Stress Method

E. Simoen, Z. Ji, A. Du, 2020, IEEE Transactions on Device and Materials Reliability.

Physical Mechanism Underlying the Time Exponent Shift in the Ultra-fast NBTI of High-k/Metal gated p-CMOSFETs

Tianchun Ye, E. Simoen, H. Yin, 2018, 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Degradation Mechanism of Short Channel p- FinFETs under Hot Carrier Stress and Constant Voltage Stress

E. Simoen, Z. Ji, H. Yin, 2020, 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Impact of Electron trapping on Energy Distribution Characterization of NBTI-Related Defects for Si p-FinFETs

Z. Ji, A. Du, H. Yin, 2020, 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Effectiveness of Repairing Hot Carrier Degradation in Si p-FinFETs Using Gate Induced Drain Leakage

A. Du, Junfeng Li, H. Yin, 2023, IEEE Electron Device Letters.

Defect-Based Empirical Model for On-State Degradation in Sub-20-nm DRAM Periphery pFETs Under Arbitrary Condition

P. Ren, Runsheng Wang, Kanyu Cao, 2022, IEEE Transactions on Electron Devices.

Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation

P. Ren, Runsheng Wang, Zixuan Sun, 2023, 2023 IEEE International Reliability Physics Symposium (IRPS).

Impact of ALD TiN Capping Layer on Interface Trap and Channel Hot Carrier Reliability of HKMG nMOSFETs

Tianchun Ye, Bo Tang, Eddy Simoen, 2018, IEEE Electron Device Letters.

On the Understanding of Defects in Short-Term Negative Bias Temperature Instability (NBTI) for Sub-20-nm DRAM Technology

P. Ren, Runsheng Wang, Zirui Wang, 2023, IEEE Electron Device Letters.

Understanding Frequency Dependence of Trap Generation Under AC Negative Bias Temperature Instability Stress in Si p-FinFETs

E. Simoen, Z. Ji, Jun Luo, 2020, IEEE Electron Device Letters.