J. Brown

发表

Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition

J. Boeckl, D. Look, G. Jessen, 2017 .

Local trap spectroscopy on cross-sectioned AlGaN/GaN devices with in situ biasing

S. Ringel, A. Arehart, E. Heller, 2019, Applied Physics Letters.

Measurement of the strengths of Be and Pb4Sb by quasi-isentropic compress and release at near 100 GPa

S. Rothman, J. Brown, J. Fairley, 2021, Journal of Applied Physics.

Shape stabilization and size equalization of InGaAs self-organized quantum dots

R. L. Jones, J. E. Nostrand, Q. Xie, 1999 .

Cathodoluminescence, microstructure, and morphology of tensile-strained AlxGa(1−x)N epitaxial films grown by gas source molecular beam epitaxy

K. Leedy, J. E. Nostrand, Q. Xie, 1999 .

Cooperative nucleation and evolution in InGaAs quantum dots in multiply stacked structures

J. E. Nostrand, Q. Xie, J. Brown, 2001 .

Growth of vertically self-organized InGaAs quantum dots with narrow inhomogeneous broadening

R. L. Jones, K. Leedy, J. E. Nostrand, 2000 .

Evolution of the Shape and Size of Ingaas Selforganized Quantum Dots

R. L. Jones, J. E. Nostrand, Q. Xie, 1999 .

Monitoring the Joule heating profile of GaN/SiC high electron mobility transistors via cross-sectional thermal imaging

G. Pavlidis, S. Graham, E. Heller, 2020 .

Annealing Effects on the Structure and Resistivity of Ni–P Films

S. T. Pai, J. P. Marton, J. Brown, 1972 .

Arsenic for antimony exchange on GaSb, its impacts on surface morphology, and interface structure

Qianghua Xie, C. E. Stutz, J. E. Nostrand, 1999 .

341 nm emission from hydride vapor-phase epitaxy ultraviolet light-emitting diodes

A. Usikov, V. Dmitriev, D. Tsvetkov, 2004 .

Modeling of Selected Ceramic Processing Parameters Employed in the Fabrication of 238PuO2 Fuel Pellets

R. Brockman, D. Kramer, J. Brown, 2011 .

Surface outgrowths on laser-deposited YBa2Cu3O7 thin films

M. G. Norton, I. Maartense, R. Biggers, 1994 .