B. Bryant

Modeling Moving Droplets: A Precursor Film Approach

B. Bryant, 2003 .

On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers

Jonathan J. Wierer, P. Kotula, D. Koleske, 2015 .

Vertical GaN Power Diodes With a Bilayer Edge Termination

Isik C. Kizilyalli, Michael W. Moseley, Ozgur Aktas, 2016, IEEE Transactions on Electron Devices.

Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

Jonathan J. Wierer, M. Crawford, D. Koleske, 2015 .

Ordered arrays of bottom-up III-nitride core-shell nanostructures

Ganesh Balakrishnan, Darryl M. Shima, S. R. J. Brueck, 2015, SPIE NanoScience + Engineering.

Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy

James S. Speck, Shuji Nakamura, Erin C. Young, 2013 .

Aluminum nitride grown on lens shaped patterned sapphire by hydride vapor phase epitaxy

D. S. Kamber, S. Nakamura, J. Speck, 2011 .

Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas in m-plane GaN Regrowth by Hydride Vapor Phase Epitaxy

S. Nakamura, K. Fujito, J. Speck, 2013 .