S. Urano

GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique

J. T. Asubar, H. Tokuda, M. Kuzuhara, 2021, Applied Physics Express.

Evidence of reduced interface states in Al2O3/AlGaN MIS structures via insertion of ex situ regrown AlGaN layer

A. Wakejima, Zenji Yatabe, A. Yamamoto, 2022, Applied Physics Express.