B. Adamowicz

发表

Effect of carrier drift-diffusion transport process on thermal quenching of photoluminescence in GaN

T. Hashizume, T. Kachi, M. Matys, 2021 .

On the origin of interface states at oxide/III-nitride heterojunction interfaces

T. Hashizume, Zenji Yatabe, R. Stoklas, 2016 .

Surface state density distribution at vacuum-annealed InP(1 0 0) surface as derived from the rigorous analysis of photoluminescence efficiency

J. Szuber, H. Hasegawa, B. Adamowicz, 2008 .

Mechanism of yellow luminescence in GaN at room temperature

M. Matys, B. Adamowicz, 2017 .

The influence of interface states and bulk carrier lifetime on the minority carrier behavior in an illuminated metal/insulator/GaN structure

T. Hashizume, Chihoko Mizue, B. Adamowicz, 2011 .

A novel III–V semiconductor material for NO2 detection and monitoring

A. Pauly, L. Bideux, B. Adamowicz, 2008 .

Computer analysis of oxygen adsorption at SnO 2 thin films

B. Adamowicz, W. Izydorczyk, 2007 .

Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition

M. Blaho, R. Stoklas, M. Matys, 2017 .

Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors

T. Hashizume, J. Kuzmík, K. Nishiguchi, 2018, Journal of Applied Physics.

Near-band gap transitions in the surface photovoltage spectra for GaAs, GaP and Si surfaces

J. Szuber, B. Adamowicz, 1990 .

Surface Photovoltage in Photoemission Studies at Si/InP(110) Heterojunctions

C. Ottaviani, P. Perfetti, C. Quaresima, 1995 .

Response to oxygen and chemical properties of SnO2 thin-film gas sensors

J. Izydorczyk, W. Jakubik, B. Adamowicz, 2008 .

Impact of Interface States and Bulk Carrier Lifetime on Photocapacitance of Metal/Insulator/GaN Structure for Ultraviolet Light Detection

T. Hashizume, Chihoko Mizue, B. Adamowicz, 2010 .

High-temperature ultraviolet detection based on surface photovoltage effect in SiN passivated n-GaN films

Z. Zytkiewicz, A. Piotrowska, A. Taube, 2016 .

The Impact of Bulk Defects, Surface States, and Excitons on Yellow and Ultraviolet Photoluminescence in GaN

T. Hashizume, Z. Zytkiewicz, E. Kamińska, 2011 .

Photoluminescence characterization of air exposed AlGaAs surface and passivated ex situ by ultrathin silicon interface control layer

H. Hasegawa, H. Fujikura, B. Adamowicz, 1998 .

XPS study of the L-CVD deposited SnO2 thin films exposed to oxygen and hydrogen

Dorota Koziej, J. Szuber, D. Koziej, 2001 .

oxygen and hydrogen

J. Szuber, D. Koziej, R. Larciprete, 2001 .

On the interpretation of cathodoluminescence intensity maps of wide band gap nanowires

M. Matys, B. Adamowicz, 2018, Nanotechnology.

Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures

T. Hashizume, J. Kuzmík, Zenji Yatabe, 2016 .

Surface electronic properties of sulfur-treated GaAs determined by surface photovoltage measurement and its computer simulation

J. Szuber, D. Zahn, J. Mizsei, 2009 .

Computer analysis of an influence of oxygen vacancies on the electronic properties of the SnO2 surface and near‐surface region

B. Adamowicz, M. Miczek, K. Waczyński, 2006 .

The comparative XPS and PYS studies of SnO2 thin films prepared by L-CVD technique and exposed to oxygen and hydrogen

J. Szuber, R. Larciprete, B. Adamowicz, 2000 .

Electronic Properties of the Clean and Oxygen Exposed GaAs(lOO) Surface

J. Szuber, B. Adamowicz, 1988 .

Rigorous analysis of photoluminescence efficiency for characterisation of electronic properties of InP(100) surfaces

H. Hasegawa, B. Adamowicz, S. Arabasz, 2002 .

Determination of InP surface state density distribution from excitation-power-dependent photoluminescence spectra using genetic algorithm-based fitting procedure

H. Hasegawa, B. Adamowicz, M. Miczek, 2002 .

Computer analysis of photoluminescence efficiency at InP surface with U-shaped surface state continuum

J. Szuber, H. Hasegawa, B. Adamowicz, 2001 .

Investigation of electron processes at the p and n type Si(111) real surface by the surface photovoltage method

B. Adamowicz, 1990 .

Simulations of Capacitance–Voltage–Temperature Behavior of Metal/Insulator/AlGaN and Metal/Insulator/AlGaN/GaN Structures

T. Hashizume, Chihoko Mizue, B. Adamowicz, 2009 .

Surface photovoltage and Auger electron spectromicroscopy studies of HfO2/SiO2/4H-SiC and HfO2/Al2O3/4H-SiC structures

A. Taube, M. Sochacki, S. Gierałtowska, 2012 .

Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surfaces and Behavior of Surface Recombination Velocity

H. Hasegawa, B. Adamowicz, 1998 .

Effects of interface states and temperature on the C-V behavior of metal/ insulator/AlGaN/GaN heterostructure capacitors

Tamotsu Hashizume, T. Hashizume, Boguslawa Adamowicz, 2008 .

Capacitance-voltage and Auger chemical profile studies on AlGaN/GaN structures passivated by SiO 2 /Si 3 N 4 and SiN x /Si 3 N 4 bilayers

T. Hashizume, B. Adamowicz, M. Miczek, 2007 .

Rigorous analysis of electronic properties and AFM studies of oxidising gas sensitive n-InP epitaxial layers

A. Pauly, B. Lauron, L. Bideux, 2008 .

Studies of gas sensing, electrical and chemical properties of n‐InP epitaxial surfaces

A. Pauly, L. Bideux, B. Adamowicz, 2006 .

Evidence of reduced interface states in Al2O3/AlGaN MIS structures via insertion of ex situ regrown AlGaN layer

A. Wakejima, Zenji Yatabe, A. Yamamoto, 2022, Applied Physics Express.

Dynamics and control of recombination process at semiconductor surfaces, interfaces and nano-structures

Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume, 2006 .

Computer analysis of photon-induced non-equilibrium phenomena at Si and AlGaAs surfaces

H. Hasegawa, B. Adamowicz, 2000 .

Dependence of silicon surface electronic parameters on surface Fermi level position

B. Adamowicz, 1994 .

Surface passivation of III–V semiconductors for future CMOS devices—Past research, present status and key issues for future

Hideki Hasegawa, A. Domanowska, Masamichi Akazawa, 2010 .

Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance–light intensity measurement

T. Hashizume, M. Matys, B. Adamowicz, 2012 .

Rigorous analysis of the electronic properties of InP interfaces for gas sensing

B. Gruzza, B. Adamowicz, M. Miczek, 2003 .

High-sensitivity NO2 sensor based on n-type InP epitaxial layers

J. Brunet, A. Pauly, J. Germain, 2005 .

Room temperature photoluminescence studies of nitrided InP(100) surfaces

M. Bugajski, B. Gruzza, C. Robert-Goumet, 2006 .

Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

T. Hashizume, K. Nishiguchi, M. Matys, 2017 .

Electronic properties of AlxGa1−xAs surface passivated by ultrathin silicon interface control layer

H. Hasegawa, H. Fujikura, B. Adamowicz, 1999 .

Capacitance-voltage and photoluminescence study of high-k∕GaAs interfaces controlled by Si interface control layer

H. Hasegawa, M. Akazawa, B. Adamowicz, 2009 .