J. Freedsman

发表

Effects of process temperature during atomic layer deposition using water and ozone as oxidants on current–voltage characteristics of Al2O3/AlGaN/GaN high-electron-mobility transistors on Si substrates

T. Egawa, Y. Yoshida, T. Kubo, 2015 .

Enhancement of breakdown voltage for fully-vertical GaN-on-Si p-n diode by using strained layer superlattice as drift layer

T. Egawa, Suguru Mase, J. Freedsman, 2018 .

Effect of Drift Layer on the Breakdown Voltage of Fully-Vertical GaN-on-Si p-n Diodes

T. Egawa, Suguru Mase, J. Freedsman, 2017, IEEE Electron Device Letters.

Normally-OFF Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with Low Leakage Current and High Breakdown Voltage (825 V)

T. Egawa, A. Ubukata, Y. Yano, 2014 .

High Drain Current Density E-Mode ${\rm Al}_{2}{\rm O}_{3}$/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit $(4\times 10^{8}~{\rm V}^{2}\Omega^{-1}{\rm cm}^{-2})$

T. Egawa, T. Kubo, J. Freedsman, 2013, IEEE Transactions on Electron Devices.

Recessed gate normally-OFF Al2O3/InAlN/GaN MOS-HEMT on silicon

T. Egawa, Tatsuya Ito, A. Watanabe, 2014 .

Enhancement-mode Al2O3/InAlN/GaN MOS-HEMT on Si with high drain current density 0.84 A/mm and threshold voltage of +1.9 V

T. Egawa, A. Watanabe, J. Freedsman, 2014, 72nd Device Research Conference.

Electrical properties of GaN-based metal–insulator–semiconductor structures with Al2O3 deposited by atomic layer deposition using water and ozone as the oxygen precursors

T. Egawa, T. Kubo, J. Freedsman, 2014 .

Analyses of hetero-interface trapping properties in AlGaN/GaN high electron mobility transistor heterostructures grown on silicon with thick buffer layers

T. Egawa, T. Kubo, J. Freedsman, 2012 .

Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

T. Egawa, A. Watanabe, J. Freedsman, 2015 .

Characterization of InAlN/GaN high-electron-mobility transistors grown on Si substrate using graded layer and strain-layer superlattice

T. Egawa, Tatsuya Ito, A. Watanabe, 2014 .

Device characteristics and performance estimation of nearly lattice-matched InAlN/AlGaN heterostructure field-effect transistors

T. Egawa, M. Miyoshi, Yuta Miyachi, 2016 .

Al2O3/AlGaN Channel Normally-Off MOSFET on Silicon With High Breakdown Voltage

T. Egawa, J. Freedsman, T. Hamada, 2017, IEEE Electron Device Letters.

Thermal stability of an InAlN/GaN heterostructure grown on silicon by metal-organic chemical vapor deposition

T. Egawa, A. Watanabe, J. Freedsman, 2015 .

The 2018 GaN power electronics roadmap

Alex Q. Huang, Yuhao Zhang, Xu Li, 2018, Journal of Physics D: Applied Physics.

Influence of AlN nucleation layer on vertical breakdown characteristics for GaN‐on‐Si

Yuya Yamaoka, Takashi Egawa, Joseph J. Freedsman, 2016 .

Studies on the structural and optical properties of zinc oxide nanobushes and Co-doped ZnO self-aggregated nanorods synthesized by simple thermal decomposition route

J. Vijaya, L. J. Kennedy, G. Sekaran, 2010 .

Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

T. Egawa, S. L. Selvaraj, T. Kubo, 2011 .

Novel fully vertical GaN p–n diode on Si substrate grown by metalorganic chemical vapor deposition

Takashi Egawa, Joseph J. Freedsman, T. Egawa, 2016 .

Effect of AlN growth temperature on trap densities of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors

T. Egawa, T. Kubo, J. Freedsman, 2012 .

Trap characterization of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures by frequency dependent conductance technique

T. Egawa, T. Kubo, J. Freedsman, 2011 .