Zhou Jun-ming

发表

Effect of GaAs/GaSb Combination Strain-Reducing Layer on Self-Assembled InAs Quantum Dots

Li Hui, Jiang Zhong-wei, Wang Wen-xin, 2008 .

Three-Step Growth Optimization of AlN Epilayers by MOCVD

Jia Haiqiang, Chen Hong, Zhou Jun-ming, 2008 .

Dislocation Reduction Mechanisms in Gallium Nitride Films Grown by Canti-Bridge Epitaxy Method

Wang Jing, Wang Wei, Chen Hong, 2007 .

Elimination of Crystallographic Wing Tilt of Canti-Bridged Epitaxial Laterally Overgrown GaN Films by Optimizing Growth Procedure

Jia Haiqiang, Wang Jing, Chen Hong, 2007 .

Luminescent Characteristics of Near Ultraviolet InGaN/GaN MQWs Grown on Grooved Sapphire Substrates Fabricated by Wet Chemical Etching

Jia Haiqiang, Wang Jing, Chen Hong, 2006 .

Growth of Semi-Insulating GaN by Using Two-Step AlN Buffer Layer

Jia Haiqiang, Z. Xing, G. Ding, 2007 .

Growth of Semi-Insulating GaN Using N 2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time

Chen Hong, Zhou Jun-ming, Guo Liwei, 2007 .

Transient photoluminescence spectra of GaAs/AlGaAs quantum wells, quantum well wires, and quantum well boxes

She Wei-Long, Yu Zhen-xin, Lin Wei-zhu, 1990 .

Reversible Carriers Tunnelling in Asymmetric Coupled InGaN/GaN Quantum Wells

N. Tamai, Wang Xiaohui, Jia Haiqiang, 2008 .

Enhanced Photoluminescence of InGaN/GaN Green Light-Emitting Diodes Grown on Patterned Sapphire Substrate

Wang Xiaohui, Jia Haiqiang, Wang Yang, 2009 .

Electroluminescence of an n-ZnO/p-GaN Heterojunction under Forward and Reverse Biases

Jia Jin-Feng, Mei Zengxia, Du Xiaolong, 2005 .

Growth of Highly Conductive n-Type Al 0.7 Ga 0.3 N Film by Using AlN Buffer with Periodical Variation of V/III Ratio

Jia Haiqiang, Chen Hong, Zhou Jun-ming, 2008 .

Growth and properties of AlGaAs/GaAs heterostructures on GaAs (110) surface

Zhou Jun-ming, H. Yi, Jia Yi, 1987 .

Characteristics of High In-Content InGaN Alloys Grown by MOCVD

Jia Haiqiang, Chen Hong, Zhou Jun-ming, 2006 .

Growth, Antimony Incorporation Behaviour and Beryllium Doping of GaAs 1-y Sb y Grown on GaAs by Molecular Beam Epitaxy

Wang Wenxin, Jiang Zhong-wei, Gao Hanchao, 2008 .

The measurement on magnetophonon resonance of 2d electron system in GaAs-AlxGa1-xAs heterostructure interface

Zhou Jun-ming, H. Yi, Yang Fu-min, 1985 .

Photoluminescence studies of In0.25Ga0.75As-GaAs strained quantum wells under high pressure

W. Lijun, Zhou Jun-ming, Tang Ru-Ming, 1989 .

Properties of InGaP/GaAs Grown by Solid-Source Molecular Beam Epitaxy with a GaP Decomposition Source

Niu Pingjuan, Wang Wen-xin, Zhou Jun-ming, 2003 .

Theoretical study of strain-induced step configuration changes on vicinal Si(001) by the growth of Ge

Zhou Jun-ming, Guo Liwei, Zhang Manhong, 1997 .

Incorporation Behaviour of Arsenic and Phosphorus in GaAsP/GaAs Grown by Solid Source Molecular Beam Epitaxy with a GaP Decomposition Source

Niu Pingjuan, Wang Wenxin, Ling Zhi-hua, 2005 .

THE EFFECT OF DOPING CONCENTRATION ON BAND-GAP NARROWING OF p-TYPE GaAs

Zhou Jun-ming, Liu Yu-long, Liang Yong-kang, 1992 .