T. Toda

A triple gate oxide CMOS technology using fluorine implant for system-on-a-chip

N. Kimizuka, Y. Goto, K. Imai, 2000, 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104).

Nanoscale selective area epitaxy of C60 crystals on GaAs by molecular beam epitaxy

Jiro Nishinaga, Y. Horikoshi, T. Aihara, 2006 .

Highly Reliable Thin MIM Capacitor on Metal (CoM) Structure with Vertical Scalability for Analog/RF Applications

Y. Hayashi, M. Furumiya, N. Inoue, 2007, 2007 IEEE International Electron Devices Meeting.

Surface Control of Bottom Electrode in Ultra-Thin SiN Metal–Insulator–Metal Decoupling Capacitors for High Speed Processors

Y. Hayashi, M. Furumiya, N. Inoue, 2007 .

Local lattice strain distribution around a transistor channel in metal–oxide–semiconductor devices

Kiyotaka Imai, Haruhiko Ono, Nobuyuki Ikarashi, 2001 .

Growth of GaAs nanostructures by area selective epitaxy by migration-enhanced epitaxy

Y. Horikoshi, T. Hasegawa, T. Toda, 2004 .

Growth Mechanism of GaAs Microdisk Structures by Area-Selective Epitaxy Using Migration-Enhanced Epitaxy

Y. Horikoshi, T. Toda, I. Yoshiba, 2007 .