A. V. Voitsekhovsky

Long-term stability of electron concentration in HgCdTe-based p–n junctions fabricated with ion etching

I. Izhnin, O. I. Fitsych, K. Mynbaev, 2015 .

Background donor concentration in HgCdTe

I. Izhnin, O. I. Fitsych, K. Mynbaev, 2015 .

Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis

V. G. Remesnik, I. Izhnin, O. I. Fitsych, 2019, Semiconductor Science and Technology.

Optical and electrical studies of arsenic–implanted HgCdTe films grown with molecular beam epitaxy on GaAs and Si substrates

I. Izhnin, O. I. Fitsych, K. Mynbaev, 2017 .

Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs

I. Izhnin, O. I. Fitsych, K. Mynbaev, 2013 .

The Action of High-Power Pulsed Beams of Nanosecond Duration on Cadmium–Mercury Telluride Semiconductors

A. Kokhanenko, A. V. Voitsekhovsky, S. Shulga, 2000 .