B. Rössner

发表

LEPECVD — A Production Technique for SiGe MOSFETs and MODFETs

U. Konig, T. Hackbarth, H. Känel, 2005 .

Thin relaxed SiGe virtual substrates grown by low-energy plasma-enhanced chemical vapor deposition

E. Müller, T. Hackbarth, H. Känel, 2005 .

High quality SiGe electronic material grown by low energy plasma enhanced chemical vapour deposition

E. Müller, T. Hackbarth, H. Känel, 2004 .

High mobility SiGe heterostructures fabricated by low-energy plasma-enhanced chemical vapor deposition

H. Känel, D. Chrastina, G. Isella, 2004 .

Effective mass in remotely doped Ge quantum wells

H. Känel, G. Isella, B. Rössner, 2003 .

An empirical study of the Mn partial density of states in icosahedral Al70Pd20Mn10

A. Kortan, M. Erbudak, J. Keller, 2001 .

Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices

Giovanni Isella, Daniel Chrastina, Thomas Hackbarth, 2004 .

Field-effect-modulated Seebeck coefficient in organic semiconductors.

K. Pernstich, B. Batlogg, B. Rössner, 2008, Nature materials.

Effective mass measurement: the influence of hole band nonparabolicity in SiGe/Ge quantum wells

B. Batlogg, H. Känel, D. Chrastina, 2006, 2006 International SiGe Technology and Device Meeting.

Scattering mechanisms in high-mobility strained Ge channels

Giovanni Isella, Daniel Chrastina, H. von Känel, 2004 .

Local electronic density of states at the surface of the bulk quasicrystal Al70Pd20Mn10

M. Erbudak, B. Bolliger, B. Rössner, 2001 .