Rik Jonckheere

发表

Advanced optical imaging platform for CD metrology and defect review on 130-nm to 100-nm node reticles: an overview of preliminary results

Vicky Philipsen, Gerd Scheuring, Thomas Schaetz, 2002, European Mask and Lithography Conference.

Experimental investigation of fabrication process-, transportation-, storage, and handling-induced contamination of 157-nm reticles and vacuum UV cleaning

Kurt G. Ronse, Michael Kocsis, Young-Seog Kang, 2004, SPIE Advanced Lithography.

OPC aware mask and wafer metrology

Vincent Wiaux, Kurt G. Ronse, Vicky Philipsen, 2002, European Mask and Lithography Conference.

Some challenges for mask making to keep up with the roadmap

Kurt G. Ronse, Thomas Marschner, Rik Jonckheere, 1998, Photomask Technology.

Reticle quality needs for advanced 193-nm lithography

Vincent Wiaux, Geert Vandenberghe, Kurt G. Ronse, 2001, Photomask Japan.

(Sub-)100nm gate patterning using 248nm alternating PSM

Patrick Jaenen, Kurt G. Ronse, Olivier Toublan, 2001 .

Modeling strategies for EUV mask multilayer defect dispositioning and repair

Andreas Erdmann, Peter Evanschitzky, Tristan Bret, 2013, Advanced Lithography.

Full field EUV lithography turning into a reality at IMEC

Kurt G. Ronse, Insung Kim, Alan Myers, 2007, Photomask Japan.

Dependence of EUV mask printing performance on blank architecture

Anne-Marie Goethals, Kurt G. Ronse, Ivan Pollentier, 2008, SPIE Advanced Lithography.

2001 update on the SEMI Standards Mask Qualification Terminology Task Force

Rik Jonckheere, 2002, SPIE Photomask Technology.

Reduction of mask-induced CD errors by optical proximity correction

Patrick Jaenen, Kurt G. Ronse, Rik Jonckheere, 1998, Advanced Lithography.

Reliable Sub-Nanometer Repeatability for CD Metrology in a Reticle Production Environment

Vicky Philipsen, Gerd Scheuring, Frank Hillmann, 2002, Photomask Technology.

Predictive modeling of EUV-lithography: the role of mask, optics, and photoresist effects

Feng Shao, Eric Hendrickx, Gian F. Lorusso, 2011, Optical Systems Design.

Overcoming EUV mask blank defects: what we can, and what we should

Rik Jonckheere, 2017, Photomask Japan.

Through-pellicle-capable DUV-based CD metrology on reticles for wafer fab and R&D environment

Vicky Philipsen, Gerd Scheuring, Frank Hillmann, 2003, European Mask and Lithography Conference.

Investigation of mask defectivity in full field EUV lithography

Anne-Marie Goethals, Kurt G. Ronse, Thomas Schmoeller, 2007, SPIE Photomask Technology.

Role of LV-SEM reticle CD measurements on DUV lithography

Kurt G. Ronse, Ivan Pollentier, Thomas Marschner, 1999, Advanced Lithography.

Hierarchical e-beam proximity correction in mask making

Christian K. Kalus, Anja Rosenbusch, Ulrich Hofmann, 1996, Advanced Lithography.

Measurement and analysis of EUV photoresist related outgassing and contamination

Anne-Marie Goethals, Ivan Pollentier, Roel Gronheid, 2009, Advanced Lithography.

Printability of hard and soft defects in 193-nm lithography

Vicky Philipsen, Christoph Friedrich, Rik Jonckheere, 2002, European Mask and Lithography Conference.

Actinic characterization and modeling of the EUV mask stack

Vicky Philipsen, Eric Hendrickx, Natalia Davydova, 2013, Other Conferences.

2002 update on the SEMI Standards Mask Qualification Terminology Task Force

Rik Jonckheere, 2002, Photomask Technology.

Assessment of OPC effectiveness using two-dimensional metrics

Vincent Wiaux, Geert Vandenberghe, Kurt G. Ronse, 2002, SPIE Advanced Lithography.

Feasibility of compensating for EUV field edge effects through OPC

Bruce W. Smith, Germain Fenger, Ardavan Niroomand, 2014, Advanced Lithography.

January 2004 update on the SEMI standards task force on photomask qualification terminology

Rik Jonckheere, 2004, European Mask and Lithography Conference.

Defect printability for 100-nm design rule using 193-nm lithography

Vicky Philipsen, Andres Torres, Rik Jonckheere, 2002, Photomask Japan.

EUV pattern shift compensation strategies

Thomas Klimpel, Anne-Marie Goethals, Kurt G. Ronse, 2008, SPIE Advanced Lithography.

Properties and performance of EUVL pellicle membranes

Jae Uk Lee, Christoph Adelmann, Houman Zahedmanesh, 2015, SPIE Photomask Technology.

Two-dimensional feature stochastic printing with mask deficiencies in high-NA EUV

Lawrence S. Melvin, Eric Hendrickx, Rik Jonckheere, 2021 .

Carbon nanotube pellicles: imaging results of the first full-field extreme ultraviolet exposures

Lieve Van Look, Eric Hendrickx, Marina Y. Timmermans, 2021 .

Contribution of mask roughness in stochasticity of high-NA EUV imaging

Lawrence S. Melvin, Rik Jonckheere, 2021, Photomask Technology.

Contribution of mask defectivity in stochastics of EUVL-based wafer printing

Lawrence S. Melvin, Rik Jonckheere, 2021 .

CNT pellicles: imaging results of the first full-field EUV exposures

Lieve Van Look, Eric Hendrickx, Marina Y. Timmermans, 2021, Advanced Lithography.

EUV mask defectivity – a process of increasing control toward HVM

Rik Jonckheere, 2017 .

Characterization and correction of optical proximity effects in deep-ultraviolet lithography using behavior modeling

Geert Vandenberghe, Kurt G. Ronse, Anthony Yen, 1996 .

Influence of gate patterning on line edge roughness

Kurt G. Ronse, Rik Jonckheere, Leonardus H. A. Leunissen, 2003 .

Experimental measurements of telecentricity errors in high-numerical-aperture extreme ultraviolet mask images

Kenneth A. Goldberg, Bruce W. Smith, Vicky Philipsen, 2014 .

Use of positive and negative chemically amplified resists in electron‐beam direct‐write lithography

Rik Jonckheere, L. V. Hove, R. Jonckheere, 1995 .