F. Lanois

Angle etch control for silicon carbide power devices

D. Planson, M. Locatelli, F. Lanois, 1996 .

6H-SiC MOS Capacitors on Sloped Surfaces: Realisation, Characterisation and Electrical Results

E. Bano, D. Planson, C. Raynaud, 1997 .

Design of a 600 V silicon carbide vertical power MOSFET

D. Planson, J. Chante, M. Locatelli, 1999 .

Chemical contribution of oxygen to silicon carbide plasma etching kinetics in a distributed electron cyclotron resonance (DECR) reactor

D. Planson, J. Chante, M. Locatelli, 1999 .

Kinetic Reaction of the Formation of the Platinum Related Complex at the Origin of the p-Type Doping Effect in Silicon

L. Ventura, W. Vervisch, A. Lhorte, 2003 .

p-type doping by platinum diffusion in low phosphorus doped silicon

L. Ventura, W. Vervisch, B. Pichaud, 2003 .

A New Generation of Power Diode: Charge Coupled Field Effect Rectifier Diode (CC-FERD)

V. C. Ngwan, F. Lanois, Shin Phay Lee, 2020, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).