S. Berberich

Metal-Nitride-Semiconductor Capacitors on 6H-SiC

P. Godignon, J. Millán, H. Hartnagel, 1997 .

Electrical characterisation of MNOS devices on p-type 6H-SiC

J. Millán, H. Hartnagel, D. Planson, 1999 .

High frequency electrical characteristics of thermally grown SiO/sub 2/ films on <0001> p-type 6H-SiC

J. Millán, G. Brezeanu, P. Godignon, 1995, 1995 International Semiconductor Conference. CAS '95 Proceedings.

Growth and characterisation of SiC films deposited on a-SiO2/Si (100) substrates

J. Millán, J. Pascual, J. Camassel, 1996 .

High frequency CV measurements of SiC MOS capacitors

J. Millán, H. Hartnagel, M. Locatelli, 1998 .

The electron irradiation effects on silicon gate dioxide used for power MOS devices

Philippe Godignon, G. Brezeanu, José Millán, 2001, Microelectron. Reliab..