M. D. Smith

Nanoscale fissure formation in AlxGa1–xN/GaN heterostructures and their influence on Ohmic contact formation

P. Parbrook, H. Li, C. Trager-Cowan, 2017 .

Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope

M. Kneissl, M. Weyers, P. Parbrook, 2020, Semiconductor Science and Technology.

Scanning electron microscopy as a flexible technique for investigating the properties of UV-emitting nitride semiconductor thin films

M. Kneissl, M. Weyers, Tao Wang, 2019, Photonics Research.

A comparison of the 60Co gamma radiation hardness, breakdown characteristics and the effect of SiNx capping on InAlN and AlGaN HEMTs for space applications

P. Parbrook, D. O'Mahony, M. Muschitiello, 2016 .

The effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures

P. Parbrook, V. Zubialevich, T. C. Sadler, 2013 .

Advances in electron channelling contrast imaging and electron backscatter diffraction for imaging and analysis of structural defects in the scanning electron microscope

M. Kneissl, M. Weyers, P. Parbrook, 2020, IOP Conference Series: Materials Science and Engineering.

Evaluation of Tribological and Mechanical Properties of Nitride Thin Films Prepared by Cathodic ARC Deposition

A. Sikder, Ashok Kumar, M. D. Smith, 2002 .

Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD

P. Parbrook, J. Holmes, John O’Connell, 2014 .

InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy

Michael Schmidt, Peter J. Parbrook, Donagh O'Mahony, 2015 .