Y. Lian

2.07-kV AlGaN/GaN Schottky Barrier Diodes on Silicon With High Baliga’s Figure-of-Merit

S. Hsu, Kaixin Wei, Chuan-Wei Tsou, 2016, IEEE Electron Device Letters.

AlGaN/GaN Schottky Barrier Diodes on Silicon Substrates With Selective Si Diffusion for Low Onset Voltage and High Reverse Blocking

S. Hsu, Yu-Syuan Lin, Y. Lian, 2013, IEEE Electron Device Letters.

AlGaN/GaN HEMTs on Silicon With Hybrid Schottky–Ohmic Drain for RF Applications

S. Hsu, Chuan-Wei Tsou, Y. Lian, 2016, IEEE Transactions on Electron Devices.

AlGaN/GaN HEMTs on Silicon With Hybrid Schottky–Ohmic Drain for High Breakdown Voltage and Low Leakage Current

Yu-Syuan Lin, S. Hsu, Yu-Syuan Lin, 2012, IEEE Electron Device Letters.

101-GHz InAlN/GaN HEMTs on Silicon With High Johnson’s Figure-of-Merit

Shawn S. H. Hsu, Chuan-Wei Tsou, S. Hsu, 2015, IEEE Transactions on Electron Devices.