Shumei Lai

Innovative Ge–SiO2 bonding based on an intermediate ultra-thin silicon layer

Cheng Li, Songyan Chen, Wei Huang, 2017, Journal of Materials Science: Materials in Electronics.

A thin transition film formed by plasma exposure contributes to the germanium surface hydrophilicity

Yihong Xu, Cheng Li, Songyan Chen, 2016 .

Suppressing the formation of GeOx by doping Sn into Ge to modulate the Schottky barrier height of metal/n-Ge contact

Chen Wang, Cheng Li, Songyan Chen, 2016 .

NiSi(x)/a-Si Nanowires with Interfacial a-Ge as Anodes for High-Rate Lithium-Ion Batteries.

Huixin Chen, Xiang Han, Yong Yang, 2016, ACS applied materials & interfaces.

High (1 1 1) orientation poly-Ge film fabricated by Al induced crystallization without the introduction of AlOx interlayer

Yihong Xu, Cheng Li, Peng Wang, 2015 .

Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate

Hsin Lin, A. Bansil, C. Yeh, 2015, Scientific Reports.

NiSi(x)/a-Si Nanowires with Interfacial a-Ge as Anodes for High-Rate Lithium-Ion Batteries.

Huixin Chen, Xiang Han, Yong Yang, 2016, ACS applied materials & interfaces.